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Reliability of Strained Si Mosfets on Varied Technology Platforms

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ISBN-10: 3838363329

ISBN-13: 9783838363325

Edition: N/A

Authors: Rimoon Agaiby

List price: $85.00
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The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.
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Book details

List price: $85.00
Publisher: Lambert Academic Publishing
Binding: Paperback
Pages: 176
Size: 6.00" wide x 9.00" long x 0.41" tall
Weight: 0.594
Language: English