MMIC Design GaAs FETs and HEMTs

Name: MMIC Design GaAs FETs and HEMTs
Price: 80.2 USD
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ISBN: 9780890063149

ISBN-10: 0890063141

ISBN-13: 9780890063149

Edition: 1989

Authors: Peter H. Ladbrooke

List price: $155.00

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Description:

Detailed information on the principles of integrated design required for successful fabrication of MMIC chips at a reasonable cost. It emphasizes CAD techniques and the effects of material variation. The device modelling techniques presented demonstrate the simulation of overall MMIC chip behavior a

Book details

List price: $155.00
Copyright year: 1989
Publisher: Artech House, Incorporated
Binding: Hardcover
Pages: 394
Size: 6.25" wide x 9.00" long x 1.25" tall
Weight: 1.694
Language: English

Foreword	p. xi
Acknowledgments	p. xiii
Notes on nomenclature, acronyms and useful data	p. xv
List of symbols	p. xvii
Introduction	p. 1
Statement of the problem	p. 1
Design approaches	p. 2
A simple example	p. 4
Yield	p. 7
The role of device physics	p. 8
MMIC types and chip functions	p. 11
Scale of IC fabrication	p. 11
Applications	p. 12
Civil	p. 12
Military	p. 14
Chip functions	p. 15
Example MMICs	p. 17
Overview of passive elements	p. 29
Introduction	p. 29
Microstripline	p. 30
Inductors	p. 34
Capacitors	p. 41
Resistors	p. 47
The Lange coupler	p. 49
Other components	p. 50
Final remarks	p. 52
PIN and Schottky diodes	p. 55
Introduction	p. 55
Schottky diodes	p. 56
PIN diodes	p. 63
MMIC uses of PIN and Schottky diodes	p. 67
Elementary FET principles	p. 69
Introduction	p. 69
Review of Si JFET operation	p. 70
Current saturation in the GaAs MESFET	p. 77
Mechanism of current saturation--summary	p. 82
Essential enhancements	p. 83
Si JFET	p. 83
GaAs MESFET	p. 84
Equivalent circuit of the GaAs MESFET	p. 85
Concluding remarks	p. 87
MESFETs	p. 91
Introduction	p. 91
Brief outline of structure	p. 91
Equivalent circuit--physical basis	p. 95
Signal delay	p. 95
Charge storage	p. 99
Current modulation	p. 109
Transconductance delay	p. 110
Intrinsic equivalent circuit	p. 112
Configuration	p. 112
Voltage dependence of the space-charge layer extension, X	p. 116
Gate strip inductance, [script l][subscript g]	p. 121
Channel, or intrinsic, resistance, R[subscript i]	p. 121
Channel current, I[subscript CH]	p. 121
Intrinsic transconductance, g[subscript m0]	p. 122
Gate-channel capacitance, C[subscript gc]	p. 123
Gate-drain capacitance, C[subscript gd]	p. 123
Transconductance delay, [tau][subscript gm]	p. 124
Implications for FET design and usage	p. 124
Output conductance and other microwave effects of substrate current	p. 125
Effect of surface charge, non-uniform doping and gate recess depth	p. 135
Series parasitic resistances R[subscript s] and R[subscript d] and effect on equivalent circuit	p. 138
Source resistance, R[subscript s]	p. 139
Drain resistances, R[subscript D] and R[subscript d]	p. 142
Gate resistance	p. 145
Geometric capacitance	p. 146
Via-hole inductance	p. 155
GaAs FET noise	p. 156
Power MMICs	p. 163
High electron mobility transistors	p. 189
Introduction	p. 189
Energy band line-up	p. 190
Physical basis and structure	p. 192
Practical HEMT structures	p. 196
Principal equivalent circuit elements	p. 198
HEMT noise	p. 201
Prospects for HEMT integration	p. 202
Reverse modeling GaAs MESFETs and HEMTs	p. 205
Introduction	p. 205
Reverse modeling for gate length	p. 205
Errors in eqns (8.2) and (8.6)	p. 211
Extension to HEMTs	p. 211
General comments	p. 215
Reverse modeling for channel doping	p. 218
Conclusion	p. 219
Design limits	p. 221
Introduction	p. 221
Limits to small-signal behavior	p. 222
Gain, frequency and voltage, and gate length	p. 222
Effect of gatewidth, Z[subscript G]	p. 225
Input and output reflection coefficient	p. 232
Maximum Tunable Gain (MTG), MAG, MSG and MUG	p. 242
Limits to large-signal (power) behavior	p. 248
FETs in amplifiers	p. 259
Introduction	p. 259
Amplifier topologies and design principles	p. 261
Reactively matched amplifiers	p. 263
Design of a two-element matching or gain slope compensation network	p. 268
Lossy matched amplifiers	p. 277
Feedback amplifiers	p. 279
Distributed amplifiers	p. 287
The matrix amplifier	p. 300
Balanced amplifiers	p. 303
First trial device synthesis	p. 305
FET synthesis by reverse modeling	p. 310
FET synthesis for distributed power amplifiers	p. 312
Power-impedance considerations	p. 313
Frequency considerations	p. 315
FET synthesis--example	p. 316
Final remarks	p. 321
Computer-aided design	p. 325
Introduction	p. 325
Sensitivity analysis--basis	p. 327
Application of the Monte Carlo method to yield forecasting	p. 337
Uses of yield forecasting	p. 343
FET centering	p. 344
Longer-term developments	p. 346
Future developments	p. 357
Index	p. 365
Table of Contents provided by Syndetics. All Rights Reserved.