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Preface | |
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Introduction to Semiconductor Lithography | |
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Basics of IC Fabrication | |
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Patterning | |
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Etching | |
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Ion Implantation | |
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Process Integration | |
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Moore's Law and the Semiconductor Industry | |
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Lithography Processing | |
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Substrate Preparation | |
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Photoresist Coating | |
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Post-Apply Bake | |
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Alignment and Exposure | |
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Post-exposure Bake | |
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Development | |
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Postbake | |
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Measure and Inspect | |
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Pattern Transfer | |
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Strip | |
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Problems | |
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Aerial Image Formation - The Basics | |
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Mathematical Description of Light | |
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Maxwell's Equations and the Wave Equation | |
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General Harmonic Fields and the Plane Wave in a Nonabsorbing Medium | |
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Phasors and Wave Propagation in an Absorbing Medium | |
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Intensity and the Poynting Vector | |
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Intensity and Absorbed Electromagnetic Energy | |
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Basic Imaging Theory | |
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Diffraction | |
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Fourier Transform Pairs | |
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Imaging Lens | |
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Forming an Image | |
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Imaging Example: Dense Array of Lines and Spaces | |
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Imaging Example: Isolated Space | |
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The Point Spread Function | |
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Reduction Imaging | |
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Partial Coherence | |
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Oblique Illumination | |
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Partially Coherent Illumination | |
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Hopkins Approach to Partial Coherence | |
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Sum of Coherent Sources Approach | |
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Off-Axis Illumination | |
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Imaging Example: Dense Array of Lines and Spaces Under Annular Illumination | |
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Kohler Illumination | |
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Incoherent Illumination | |
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Some Imaging Examples | |
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Problems | |
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Aerial Image Formation - The Details | |
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Aberrations | |
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The Causes of Aberrations | |
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Describing Aberrations: the Zernike Polynomial | |
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Aberration Example - Tilt | |
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Aberration Example - Defocus, Spherical and Astigmatism | |
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Aberration Example - Coma | |
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Chromatic Aberrations | |
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Strehl Ratio | |
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Pupil Filters and Lens Apodization | |
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Flare | |
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Measuring Flare | |
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Modeling Flare | |
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Defocus | |
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Defocus as an Aberration | |
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Defocus Example: Dense Lines and Spaces and Three-Beam Imaging | |
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Defocus Example: Dense Lines and Spaces and Two-Beam Imaging | |
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Image Isofocal Point | |
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Focus Averaging | |
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Reticle Defocus | |
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Rayleigh Depth of Focus | |
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Imaging with Scanners Versus Steppers | |
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Vector Nature of Light | |
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Describing Polarization | |
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Polarization Example: TE Versus TM Image of Lines and Spaces | |
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Polarization Example: The Vector PSF | |
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Polarization Aberrations and the Jones Pupil | |
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Immersion Lithography | |
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The Optical Invariant and Hyper-NA Lithography | |
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Immersion Lithography and the Depth of Focus | |
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Image Quality | |
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Image CD | |
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Image Placement Error (Distortion) | |
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Normalized Image Log-Slope (NILS) | |
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Focus Dependence of Image Quality | |
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Problems | |
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Imaging in Resist: Standing Waves and Swing Curves | |
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Standing Waves | |
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The Nature of Standing Waves | |
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Standing Waves for Normally Incident Light in a Single Film | |
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Standing Waves in a Multiple-Layer Film Stack | |
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Oblique Incidence and the Vector Nature of Light | |
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Broadband Illumination | |
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Swing Curves | |
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Reflectivity Swing Curve | |
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Dose-to-Clear and CD Swing Curves | |
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Swing Curves for Partially Coherent Illumination | |
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Swing Ratio | |
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Effective Absorption | |
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Bottom Antireflection Coatings | |
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BARC on an Absorbing Substrate | |
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BARCs at High Numerical Apertures | |
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BARC on a Transparent Substrate | |
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BARC Performance | |
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Top Antireflection Coatings | |
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Contrast Enhancement Layer | |
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Impact of the Phase of the Substrate Reflectance | |
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Imaging in Resist | |
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Image in Resist Contrast | |
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Calculating the Image in Resist | |
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Resist-Induced Spherical Aberrations | |
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Standing Wave Amplitude Ratio | |
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Defining Intensity | |
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Intensity at Oblique Incidence | |
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Refraction into an Absorbing Material | |
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Intensity and Absorbed Energy | |
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Problems | |
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Conventional Resists: Exposure and Bake Chemistry | |
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Exposure | |
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Absorption | |
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Exposure Kinetics | |
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Post-Apply Bake | |
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Sensitizer Decomposition | |
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Solvent Diffusion and Evaporation | |
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Solvent Effects in Lithography | |
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Post-exposure Bake Diffusion | |
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Detailed Bake Temperature Behavior | |
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Measuring the ABC Parameters | |
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Problems | |
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Chemically Amplified Resists: Exposure and Bake Chemistry | |
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Exposure Reaction | |
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Chemical Amplification | |
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Amplification Reaction | |
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Diffusion | |
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Acid Loss | |
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Base Quencher | |
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Reaction-Diffusion Systems | |
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Measuring Chemically Amplified Resist Parameters | |
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Stochastic Modeling of Resist Chemistry | |
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Photon Shot Noise | |
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Chemical Concentration | |
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Some Mathematics of Binary Random Variables | |
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Photon Absorption and Exposure | |
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Acid Diffusion, Conventional Resist | |
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Acid-Catalyzed Reaction-Diffusion | |
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Reaction-Diffusion and Polymer Deblocking | |
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Acid-Base Quenching | |
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Problems | |
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Photoresist Development | |
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Kinetics of Development | |
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A Simple Kinetic Development Model | |
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Other Development Models | |
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Molecular Weight Distributions and the Critical Ionization Model | |
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Surface Inhibition | |
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Extension to Negative Resists | |
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Developer Temperature | |
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Developer Normality | |
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The Development Contrast | |
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Defining Photoresist Contrast | |
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Comparing Definitions of Contrast | |
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The Practical Contrast | |
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Relationship between [gamma] and r[subscript max]/r[subscript min] | |
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The Development Path | |
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The Euler-Lagrange Equation | |
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The Case of No z-Dependence | |
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The Case of a Separable Development Rate Function | |
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Resist Sidewall Angle | |
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The Case of Constant Development Gradients | |
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Segmented Development and the Lumped Parameter Model (LPM) | |
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LPM Example - Gaussian Image | |
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Measuring Development Rates | |
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Problems | |
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Lithographic Control in Semiconductor Manufacturing | |
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Defining Lithographic Quality | |
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Critical Dimension Control | |
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Impact of CD Control | |
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Improving CD Control | |
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Sources of Focus and Dose Errors | |
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Defining Critical Dimension | |
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How to Characterize Critical Dimension Variations | |
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Spatial Variations | |
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Temporal Variations and Random Variations | |
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Characterizing and Separating Sources of CD Variations | |
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Overlay Control | |
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Measuring and Expressing Overlay | |
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Analysis and Modeling of Overlay Data | |
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Improving Overlay Data Analysis | |
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Using Overlay Data | |
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Overlay Versus Pattern Placement Error | |
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The Process Window | |
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The Focus-Exposure Matrix | |
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Defining the Process Window and DOF | |
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The Isofocal Point | |
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Overlapping Process Windows | |
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Dose and Focus Control | |
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H-V Bias | |
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Astigmatism and H-V Bias | |
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Source Shape Asymmetry | |
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Mask Error Enhancement Factor (MEEF) | |
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Linearity | |
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Defining MEEF | |
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Aerial Image MEEF | |
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Contact Hole MEEF | |
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Mask Errors as Effective Dose Errors | |
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Resist Impact on MEEF | |
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Line-End Shortening | |
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Measuring LES | |
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Characterizing LES Process Effects | |
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Critical Shape and Edge Placement Errors | |
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Pattern Collapse | |
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Problems | |
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Gradient-Based Lithographic Optimization: Using the Normalized Image Log-Slope | |
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Lithography as Information Transfer | |
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Aerial Image | |
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Image in Resist | |
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Exposure | |
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Post-exposure Bake | |
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Diffusion in Conventional Resists | |
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Chemically Amplified Resists - Reaction Only | |
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Chemically Amplified Resists - Reaction-Diffusion | |
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Chemically Amplified Resists - Reaction-Diffusion with Quencher | |
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Develop | |
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Conventional Resist | |
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Chemically Amplified Resist | |
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Resist Profile Formation | |
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The Case of a Separable Development Rate Function | |
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Lumped Parameter Model | |
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Line Edge Roughness | |
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Summary | |
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Problems | |
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Resolution Enhancement Technologies | |
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Resolution | |
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Defining Resolution | |
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Pitch Resolution | |
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Natural Resolutions | |
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Improving Resolution | |
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Optical Proximity Correction (OPC) | |
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Proximity Effects | |
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Proximity Correction - Rule Based | |
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Proximity Correction - Model Based | |
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Subresolution Assist Features (SRAFs) | |
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Off-Axis Illumination (OAI) | |
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Phase-Shifting Masks (PSM) | |
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Alternating PSM | |
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Phase Conflicts | |
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Phase and Intensity Imbalance | |
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Attenuated PSM | |
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Impact of Phase Errors | |
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Natural Resolutions | |
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Contact Holes and the Point Spread Function | |
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The Coherent Line Spread Function (LSF) | |
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The Isolated Phase Edge | |
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Problems | |
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Glossary of Microlithographic Terms | |
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Curl, Divergence, Gradient, Laplacian | |
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The Dirac Delta Function | |
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Index | |