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| Growth of Crystalline Silicon Carbide | |
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| Recent Progress in Epitaxial Growth of SiC | |
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| Si[subscript 1-y]C[subscript y] Alloys - Extending Si-Based Heterostructure Engineering | |
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| Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers | |
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| Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method | |
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| Heteroepitaxial Growth of 3C-SiC by LPCVD with Alternate Gas Supply | |
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| Mechanisms in the Low Pressure Growth of SiC-on-Si by RTCVD | |
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| Effects of CH[subscript 3]Cl Gas on Heteroepitaxial Growth of [Beta]-SiC on Si(111) by Chemical Vapor Deposition | |
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| Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substrates | |
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| Epitaxial Growth of Cubic SiC Using Various Alkyl-Silicon Compounds by Chemical Vapor Deposition | |
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| Growth and Characterization of [Beta]-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy | |
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| Atomic Layer Control of [Beta]-SiC(001) Surface | |
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| Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method | |
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| Liquid Phase Epitaxy of SiC-AIN Soled Solutions | |
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| Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources | |
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| Growth of Cubic Silicon Carbide on Silicon Using the C[subscript 2]HCl[subscript 3]-SiH[subscript 4]-H[subscript 2] System | |
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| AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate | |
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| Characterization of Crystalline Silicon Carbide | |
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| Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC | |
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| Nitrogen Impurities in 3C-SiC Epilayers | |
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| Electron Nuclear Double Resonance Investigations of Nitrogen Donors in 6H and 4H-SiC | |
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| Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers | |
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| EPR in the 2-mm Range and Optical Absorption of the Native Defect in 4H-SiC Epilayers | |
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| The Structure of the D-Center in Silicon Carbide - A Study with Electron Nuclear Double Resonance | |
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| Oxidation Studies for 6H-Si6 | |
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| Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model | |
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| Metallization Studies on Epitaxial 6H-SiC | |
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| TEM Study of [Beta]-SiC Films Grown on (111) Silicon Substrates | |
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| Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies | |
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| Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM | |
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| Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD | |
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| Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide | |
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| Optically Induced Near-IR Absorption Lines in 6H-SiC | |
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| Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates | |
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| Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra | |
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| Growth and Characterization of Polycrystalline, Microcrystalline, and Amorphous Silicon Carbide | |
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| Novel Feedstocks for a-SiC:H Films | |
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| Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide | |
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| Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD | |
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| Formation of SiC for Microelectronic Applications by C Implantation into Doped a-Si | |
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| Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower than 1000[degree]C | |
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| Si[subscript x]C[subscript 1-x] Alloys Deposited on Silicon Using a Low-Cost, Hot-Wall, LPCVD Reactor | |
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| Low Temperature PECVD Growth and Characterization of a-SiC:H Films Deposited from Silacyclobutane and Silane/Methane Precursor Gases | |
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| Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method | |
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| Applications | |
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| Applications for 6H-Silicon Carbide Devices | |
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| HBTs Using a-SiC and [mu]c-Si | |
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| Impact of SiC on Power Devices | |
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| SiC[subscript x]:F Hetero-Emitter and Epitaxial-Base Bipolar Transistors | |
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| A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors | |
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| The Development of ECR-CVD SiC Coatings for X-Ray Mask Membranes | |
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| Pattern Etching of Crystalline SiC by KrF Excimer Laser | |
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| Electrical Characterization of PiN Diode Structures in 6H-SiC | |
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| High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC | |
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| Dependence of the Au-SiC(6H) Schottky Barriers Height on the SiC Surface Treatment | |
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| Photoelectrochemical Etching and Dopant Selective Etch-Stops in SiC | |
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| Fabrication and Electrical Properties of [Beta]-SiC/Si and Poly-SiC/Si Solar Cells | |
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| Simulations of Ge and C Implantations to Form Si[[subscript 1-x]Ge[subscript x] BJT | |
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| The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide | |
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| Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes | |
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| High-Temperature and High-Voltage Diamond Devices | |
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| Gamma-Ray Irradiation Effects on Cubic Silicon Carbide Metal-Oxide-Semiconductor Structure | |
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| Formation of SiGe/Si Heterostructures by Low-Temperature Germanium Ion Implantation | |
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| Characterization of Ge and C Implanted Si Diodes | |
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| Selective Growth of SiC and Application to Heterojunction Devices | |
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| Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide | |
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| Effect of H[subscript 2]2 Additive on Reactive Ion Etching of [Beta]-SiC in CHF[subscript 3]/O[subscript 2] Plasma | |
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| Index of Contributors | |