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Semiconductor Device Modeling with SPICE

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ISBN-10: 0070021538

ISBN-13: 9780070021532

Edition: N/A

Authors: Paolo Antognetti, Guiseppe Massobrio

List price: $29.95
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Description:

With all the clarity & hands-on practicality of the best-selling first edition, this revised version explains the ins & outs of SPICE, plus gives new data on modeling advanced devices such as MESFETs, ISFETs, & thyristors. And because it's the only book that describes the models themselves, it helps readers gain maximum value from SPICE, rather than just telling them how to run the program. This guide is also distinctive in covering both MOS & FET models. Step by step, it takes the reader through the modeling process, providing complete information on a variety of semiconductor devices for designing specific circuit applications. These include: Pn junction & Schottky diodes; bipolar…    
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Book details

List price: $29.95
Publisher: McGraw-Hill Companies, The
Binding: Hardcover
Pages: 416
Language: English

List of Physical Parameters
Foreword
Preface
PN-Junction Diode and Schottky Diodep. 1
Bipolar Junction Transistor (BJT)p. 45
Junction Field-Effect Transistor (JFET)p. 131
Metal-Oxide-Semiconductor Transistor (MOST)p. 161
BJT Parameter Measurementsp. 251
MOST Parameter Measurementsp. 267
Noise and Distortionp. 299
The SPICE Programp. 325
Metal-Semiconductor Field-Effect Transistor, Ion-Sensitive Field-Effect Transistor, and Semiconductor-Controlled Rectifierp. 375
Appendix A. PN Junctionp. 411
Appendix B. MOS Junctionp. 445
Appendix C. MS Junctionp. 471
Indexp. 475
Table of Contents provided by Blackwell. All Rights Reserved.