Solid State Electronic Devices

ISBN-10: 013149726X

ISBN-13: 9780131497269

Edition: 6th 2006 (Revised)

Authors: Ben Streetman, Sanjay Banerjee

List price: $221.80
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Book details

List price: $221.80
Edition: 6th
Copyright year: 2006
Publisher: Prentice Hall PTR
Publication date: 7/26/2005
Binding: Hardcover
Pages: 608
Size: 7.25" wide x 9.25" long x 1.25" tall
Weight: 2.332
Language: English

Crystal Properties and Growth of Semiconductors
Semiconductor Materials
Periodic Structures
Crystal Lattices
Cubic Lattices
Planes and Directions
The Diamond Lattice
Bulk Crystal Growth
Starting Materials
Growth of Single Crystal Ingots
Epitaxial Growth
Lattice Matching in Epitaxial Growth
Vapor-Phase Epitaxy
Molecular Beam Epitaxy
Atoms and Electrons
Introduction to Physical Models
Experimental Observations
The Photoelectric Effect
Atomic Spectra
The Bohr Model
Quantum Mechanics
Probability and the Uncertainty Principle
The Schrdinger Wave Equation
Potential Well Problem
Atomic Structure and the Periodic Table
The Hydrogen Atom
The Periodic Table
Energy Bands and Charge Carriers in Semiconductors
Bonding Forces and Energy Bands in Solids
Bonding Forces in Solids
Energy Bands
Metals, Semiconductors, and Insulators
Direct and Indirect Semiconductors
Variation of Energy Bands with Alloy Composition
Charge Carriers in Semiconductors
Electrons and Holes
Effective Mass
Intrinsic Material
Extrinsic Material
Electrons and Holes in Quantum Wells
Carrier Concentrations
The Fermi Level
Electron and Hole Concentrations at Equilibrium
Temperature Dependence of Carrier Concentrations
Compensation and Space Charge Neutrality
Drift of Carriers in Electric and Magnetic Fields
Conductivity and Mobility
Drift and Resistance
Effects of Temperature and Doping on Mobility
High-Field Effects
The Hall Effect
Invariance of the Fermi Level at Equilibrium
Excess Carriers in Semiconductors
Optical Absorption
Carrier Lifetime and Photoconductivity
Direct Recombination of Electrons and Holes
Indirect Recombination
Steady State Carrier Generation
Quasi-Fermi Levels
Photoconductive Devices
Diffusion of Carriers
Diffusion Processes
Diffusion and Drift of Carriers
Built-in Fields
Diffusion and Recombination
The Continuity Equation
Steady State Carrier Injection
Diffusion Length
The Haynes-Shockley Experiment
Gradients in the Quasi-Fermi Levels
Fabrication of p-n Junctions
Thermal Oxidation
Rapid Thermal Processing
Ion Implantation
Chemical Vapor Deposition (CVD)
Equilibrium Conditions
The Contact Potential
Equilibrium Fermi Levels
Space Charge at a Junction
Forward- and Reverse-Biased Junctions
Steady State Conditions
Qualitative Description of Current Flow at a Junction
Carrier Injection
Reverse Bias
Reverse-Bias Breakdown
Zener Breakdown
Avalanche Breakdown
The Breakdown Diode
Transient and A-C Conditions
Time Variation of Stored Charge
Reverse Recovery Transient
Switching Diodes
Capacitance of p-n Junctions
The Varactor Diode
Deviations from the Simple Theory
Effects of Contact Potential on Carrier Injection
Recombination and Generation in the Transition Region
Ohmic Losses
Graded Junctions
Metal-Semiconductor Junctions
Schottky Barriers
Rectifying Contacts
Ohmic Contacts
Typical Schottky Barriers
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