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| Crystal Properties and Growth of Semiconductors | |
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| Semiconductor Materials | |
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| Periodic Structures | |
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| Crystal Lattices | |
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| Cubic Lattices | |
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| Planes and Directions | |
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| The Diamond Lattice | |
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| Bulk Crystal Growth | |
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| Starting Materials | |
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| Growth of Single Crystal Ingots | |
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| Wafers | |
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| Doping | |
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| Epitaxial Growth | |
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| Lattice Matching in Epitaxial Growth | |
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| Vapor-Phase Epitaxy | |
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| Molecular Beam Epitaxy | |
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| Atoms and Electrons | |
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| Introduction to Physical Models | |
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| Experimental Observations | |
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| The Photoelectric Effect | |
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| Atomic Spectra | |
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| The Bohr Model | |
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| Quantum Mechanics | |
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| Probability and the Uncertainty Principle | |
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| The Schrdinger Wave Equation | |
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| Potential Well Problem | |
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| Tunneling | |
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| Atomic Structure and the Periodic Table | |
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| The Hydrogen Atom | |
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| The Periodic Table | |
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| Energy Bands and Charge Carriers in Semiconductors | |
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| Bonding Forces and Energy Bands in Solids | |
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| Bonding Forces in Solids | |
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| Energy Bands | |
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| Metals, Semiconductors, and Insulators | |
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| Direct and Indirect Semiconductors | |
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| Variation of Energy Bands with Alloy Composition | |
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| Charge Carriers in Semiconductors | |
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| Electrons and Holes | |
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| Effective Mass | |
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| Intrinsic Material | |
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| Extrinsic Material | |
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| Electrons and Holes in Quantum Wells | |
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| Carrier Concentrations | |
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| The Fermi Level | |
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| Electron and Hole Concentrations at Equilibrium | |
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| Temperature Dependence of Carrier Concentrations | |
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| Compensation and Space Charge Neutrality | |
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| Drift of Carriers in Electric and Magnetic Fields | |
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| Conductivity and Mobility | |
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| Drift and Resistance | |
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| Effects of Temperature and Doping on Mobility | |
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| High-Field Effects | |
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| The Hall Effect | |
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| Invariance of the Fermi Level at Equilibrium | |
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| Excess Carriers in Semiconductors | |
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| Optical Absorption | |
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| Luminescence | |
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| Photoluminescence | |
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| Electroluminescence | |
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| Carrier Lifetime and Photoconductivity | |
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| Direct Recombination of Electrons and Holes | |
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| Indirect Recombination | |
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| Trapping | |
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| Steady State Carrier Generation | |
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| Quasi-Fermi Levels | |
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| Photoconductive Devices | |
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| Diffusion of Carriers | |
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| Diffusion Processes | |
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| Diffusion and Drift of Carriers | |
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| Built-in Fields | |
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| Diffusion and Recombination | |
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| The Continuity Equation | |
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| Steady State Carrier Injection | |
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| Diffusion Length | |
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| The Haynes-Shockley Experiment | |
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| Gradients in the Quasi-Fermi Levels | |
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| Junctions | |
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| Fabrication of p-n Junctions | |
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| Thermal Oxidation | |
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| Diffusion | |
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| Rapid Thermal Processing | |
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| Ion Implantation | |
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| Chemical Vapor Deposition (CVD) | |
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| Photolithography | |
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| Etching | |
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| Metallization | |
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| Equilibrium Conditions | |
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| The Contact Potential | |
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| Equilibrium Fermi Levels | |
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| Space Charge at a Junction | |
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| Forward- and Reverse-Biased Junctions | |
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| Steady State Conditions | |
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| Qualitative Description of Current Flow at a Junction | |
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| Carrier Injection | |
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| Reverse Bias | |
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| Reverse-Bias Breakdown | |
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| Zener Breakdown | |
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| Avalanche Breakdown | |
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| Rectifiers | |
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| The Breakdown Diode | |
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| Transient and A-C Conditions | |
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| Time Variation of Stored Charge | |
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| Reverse Recovery Transient | |
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| Switching Diodes | |
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| Capacitance of p-n Junctions | |
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| The Varactor Diode | |
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| Deviations from the Simple Theory | |
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| Effects of Contact Potential on Carrier Injection | |
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| Recombination and Generation in the Transition Region | |
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| Ohmic Losses | |
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| Graded Junctions | |
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| Metal-Semiconductor Junctions | |
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| Schottky Barriers | |
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| Rectifying Contacts | |
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| Ohmic Contacts | |
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| Typical Schottky Barriers | |
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| Heterojunctions | |