Operation and Modeling of the MOS Transistor
Edition: 2nd 1999
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All the information you need in one place! Each Study Brief is a summary of one specific subject; facts, figures, and explanations to help you learn faster.
Copyright year: 1999
Publisher: McGraw-Hill Higher Education
Size: 7.75" wide x 9.75" long x 1.50" tall
|Semiconductors, Junctions, and MOSFET Overview||p. 1|
|The Two-Terminal MOS Structure||p. 50|
|The Three-Terminal MOS Structure||p. 91|
|The Four-Terminal MOS Transistor||p. 125|
|MOS Transistors with Ion-Implanted Channels||p. 207|
|Small-Dimension Effects||p. 248|
|The MOS Transistor in Dynamic Operation - Large-Signal Modeling||p. 312|
|Small-Signal Modeling for Low and Medium Frequencies||p. 359|
|High-Frequency Small-Signal Models||p. 440|
|MOSFET Modeling for Circuit Simulation||p. 513|
|Energy Bands and Related Concepts||p. 557|
|Basic Laws of Electrostatics in One Dimension||p. 566|
|Charge Density, Electric Field, and Potential in the pn Junction||p. 572|
|Energy Band Diagrams for the Two-Terminal MOS Structure||p. 574|
|Charge Density, Electric Field, and Potential in the Two-Terminal MOS Structure||p. 578|
|General Analysis of the Two-Terminal MOS Structure||p. 580|
|Careful Definitions for the Limits of Moderate Inversion||p. 584|
|Energy Band Diagrams for the Three-Terminal MOS Structure||p. 587|
|General Analysis of the Three-Terminal MOS Structure||p. 591|
|Drain Current Formulation Using Quasi-Fermi Potentials||p. 594|
|Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region||p. 598|
|Evaluation of the Intrinsic Transient Source and Drain Currents||p. 600|
|Charges for the Accurate Strong-Inversion Model||p. 603|
|Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model||p. 606|
|Table of Contents provided by Blackwell. All Rights Reserved.|