Physics and Modeling of Mosfets

Name: Physics and Modeling of Mosfets
Price: 89.57 USD
Availability: InStock
ISBN: 9789812568649

ISBN-10: 9812568646

ISBN-13: 9789812568649

Edition: 2007

Authors: Miura-Mattausch

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Description:

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Book details

Copyright year: 2007
Publisher: World Scientific Publishing Co Pte Ltd
Publication date: 6/3/2008
Binding: Hardcover
Size: 6.50" wide x 9.25" long x 1.00" tall
Weight: 1.496
Language: English



Definition of Symbols Used for Variables and Constants



Semiconductor Device Physics



Basic Compact Surface-Potential Model of the MOSFET



Advanced MOSFET Phenomena Modeling



Capacitances



Leakage Currents and Junction Diode



Modeling of Phenomena Important for RF Applications



Summary of HiSIM's Model Equations, Parameters, and Parameter-Extraction Method


Bibliography


Index