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Preface | |
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Program Committee Members | |
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Transistor Physics History | |
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John Bardeen and Transistor Physics | |
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Challenges | |
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Technology in the Internet Era | |
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Metrology Needs and Challenges for the Semiconductor Industry | |
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Impact of the ITRS Metrology Roadmap | |
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Semiconductor Product Analysis Challenges Based on the 1999 ITRS | |
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The Assembly Analytical Forum: Addressing the Analytical Challenges Facing Packaging and Assembly | |
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Front end Processes--Materials | |
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Silicon Wafers for the Mesoscopic Era | |
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Front end Processes--Gate Dielectrics | |
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Photoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectrics | |
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Challenges of Gate-Dielectric Scaling, including the Vertical Replacement-Gate MOSFET | |
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Electrical Characterization of Ultra-thin Oxides and High K Gate Dielectrics | |
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Modeling Soft Breakdown Phenomenon under Constant Voltage Stress in Ultra Thin Gate Oxides with PSpice Circuit Simulator | |
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Product Wafer Measurements of MOS Gate Dielectric Quality with a Small Diameter Elastic Probe | |
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HRTEM Image Simulations of Structural Defects in Gate Oxides | |
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HRTEM Image Simulations for Gate Oxide Metrology | |
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Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: A Fundamental Difference | |
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An Examination of Tantalum Pentoxide Thin Dielectric Films Using Grazing Incidence X-ray Reflectivity and Powder Diffraction | |
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Gate Dielectric Thickness Metrology Using Transmission Electron Microscopy | |
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Spectroscopic Evidence for a Network Structure in Plasma-Deposited Ta[subscript 2]O[subscript 5] Films for Microelectronic Applications | |
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Minimization of Mechanical and Chemical Strain at Dielectric-Semiconductor and Internal Dielectric Interfaces in Stacked Gate Dielectrics for Advanced CMOS Devices | |
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Characterization of Silicon-Oxynitride Dielectric Thin Films Using Grazing Incidence X-ray Photoelectron Spectroscopy | |
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Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films | |
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Non-contact Thickness and Electrical Characterization of High-k Dielectrics | |
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Front End Processes | |
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Junction Depth Measurement Using Carrier Illumination | |
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Novel Techniques for Data Retention and Leff Measurements in Two Bit microFLASH Memory Cells | |
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Characterizing Interfacial Roughness by Light Scattering Ellipsometry | |
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Directional Mass Analysis of Ozone Dissociation during Thin Oxide Formation with Highly Concentrated Ozone | |
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TEM Analysis of 64M Flash Memory Using FIB Sample Preparation Techniques | |
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Power Spectral Density Functions for Si Wafer Surfaces Using Six Measurement Techniques | |
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Non-contact Defect Diagnostics in Cz-Si Wafers Using Resonance Ultrasonic Vibrations | |
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Front End Processes--Electrical Characterization | |
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Quantitative Analysis of Copper Contamination in Silicon by Surface Photovoltage Minority Carrier Lifetime Analysis | |
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COCOS (Corona Oxide Characterization of Semiconductor) Non-contact Metrology for Gate Dielectrics | |
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"Gated-Diode" Configuration in SOI MOSFET's: A Sensitive Tool for Evaluating the Quality and Reliability of the Buried Si/SiO[subscript 2] Interface | |
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Front End Processes--In-Situ | |
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Investigation and Control of Spatial Characteristics of Chamber-Cleaning Plasmas | |
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Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges | |
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Development of an In-Line X-ray Reflectivity Technique for Metal Film Thickness Measurement | |
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In-Situ Sensing Using Mass Spectrometry and Its Use for Run-to-Run Control on a W-CVD Cluster Tool | |
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ITS-90 Calibration of Radiation Thermometers for RTP Using Wire/Thin-Film Thermocouples on a Wafer | |
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Non-destructive Characterization of CMP Pads Using Scanning Ultrasonic Transmission | |
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Monitoring Ion Current and Ion Energy during Plasma Processing Using Radio-Frequency Current and Voltage Measurements | |
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Fiber Optic Based Optical Tomography Sensor for Monitoring Plasma Uniformity | |
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Contamination and Defect Analysis | |
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Chemical Contamination Control in ULSI Wafer Processing | |
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Full Wafer Particle Defect Characterization | |
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A Numerical/Experimental Investigation of Microcontamination in a Rotating Disk Chemical Vapor Deposition Reactor | |
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Detection of Organic Contamination on Silicon Substrates: Comparison of Several Techniques | |
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On Problems in Obtaining Root Cause Analysis of Al-Based Particles | |
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PEEM Imaging and Modeling of Dopant-Concentration Variation in Si Devices | |
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Defect Identification by Compositional Defect Review Using Auger Electron Spectroscopy | |
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Defect Mapping Accuracy of KLA-Tencor Surfscan 6200, 6400, and SP1 | |
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Comparison of Size Distribution of Polystyrene Spheres Produced by Pneumatic and Electrospray Nebulization | |
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Characterization and Analysis of Microelectronic Processes Using Raman Spectroscopy | |
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Application of Micro-Raman and Photoluminescence Spectroscopy to Defect and Thin Film Characterization | |
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Lithography | |
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The Status and Future of Imaging Metrology Needs for Lithography | |
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Critical Issues in Overlay Metrology | |
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Small-Angle Neutron Scattering Measurements for the Characterization of Lithographically Prepared Structures | |
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New Developments in Deep Ultraviolet Laser Metrology for Photolithography | |
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Secondary Electron Image Profiles Using Bias Voltage Technique in Deep Contact Hole | |
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A Hybrid Analysis of Ellipsometry Data from Patterned Structures | |
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Characterization of CCD Cameras and Optics for Dimensional Metrology | |
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Interconnect and Back End Processing | |
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Guidelines for Selecting Multi-technology Recipes in Multilayer Filmstack Measurements | |
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Measurement of the Dielectric Constant of Thin Films Using Goniometric Time-Domain Spectroscopy | |
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New Photo-Acoustic Techniques for Improved In-Line Control of Opaque Metal Film Processing | |
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Cu Electrodeposition for On-Chip Interconnections | |
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Characterization of BPSG Films Using Neutron Depth Profiling and Neutron/X-ray Reflectometry | |
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Energy Dispersive X-ray Analysis Using a Microcalorimeter Detector | |
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Polysilicon Chemical-Mechanical Polishing Process Characterization Using a Non-contact Capacitance Probe Technique | |
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Interconnect and Back End Processing--Low-K | |
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The Transition to Cu, Damascene and Low-K Dielectrics for Integrated Circuit Interconnects, Impacts on the Industry | |
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Mechanical Characterization of Low-K Dielectric Materials | |
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Investigation of N[subscript 2] Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-ray Reflectivity | |
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High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples | |
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Nanoscale Elastic Imaging and Mechanical Modulus Measurements of Aluminum/Low-k Dielectric Interconnect Structures | |
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Structure and Property Characterization of Low-k Dielectric Porous Thin Films Determined by X-ray Reflectivity and Small-Angle Neutron Scattering | |
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Thin Film | |
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Semiconductor Material Applications of Rapid X-ray Reflectometry (XRR) | |
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Recent Progress in Picosecond Ultrasonic Process Metrology | |
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Non-contact Metal Film Metrology Using Impulsive Stimulated Thermal Scattering | |
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Critical Analytical Techniques | |
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New Challenges for Analytical TEM in Device Characterization | |
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Gate Dielectric Metrology Using Advanced TEM Measurements | |
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Low Voltage Microanalysis Using Microcalorimeter EDS | |
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Spectroscopic Ellipsometry from the Vacuum Ultraviolet to the Far Infrared | |
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Critical Analytical Techniques--Optical Characterization | |
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Optical Metrology for DMD Characterization | |
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Backside Picosecond Timing Measurements on CMOS Integrated Circuits | |
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Optical Constants for Metrology of Hydrogenated Amorphous Silicon-Nitrogen Alloys on Si | |
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Feasibility and Applicability of Integrated Metrology Using Spectroscopic Ellipsometry in a Cluster Tool | |
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A New Purged UV Spectroscopic Ellipsometer to Characterize Thin Films and Multilayers at 157 nm | |
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A New Lithography of Functional Plasma Polymerized Thin Films | |
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Advanced FTIR Technology for the Chemical Characterization of Product Wafers | |
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Critical Analytical Techniques--Physical Characterization/X-rays | |
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Scanning Electron Microscopy: Present Capability, Future Improvements and Potential Replacements | |
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Ultra High Resolution X-ray Detectors | |
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X-ray Metrology by Diffraction and Reflectivity | |
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Automated SEM and TEM Sample Preparation Applied to Copper/Low-k Materials | |
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Characterization of Si/SiO[subscript 2] Multilaver Thin Films by Grazing Incidence X-ray Reflectivity | |
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Measurement of Silicon Dioxide Film Thicknesses by X-ray Photoelectron Spectroscopy | |
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Comparison of High- and Low-Voltage X-ray Mapping of an Electronic Device | |
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Current Projects of ISO Technical Committee 201 on Surface Chemical Analysis | |
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Characterization of Ultra-thin Dielectric Films Buried under Poly-Si Electrodes Using X-ray Reflectivity | |
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Critical Analytical Techniques--Atom Probes/Scanning Probes | |
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Towards Routine, Quantitative Two-Dimensional Carrier Profiling with Scanning Spreading Resistance Microscopy | |
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Local Electrode Atom Probes: Prospects for 3D Atomic-Scale Metrology Applications in the Semiconductor and Data Storage Industries | |
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Evaluation of MFM for Probing Electromigration Processes | |
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FASTC2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images | |
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High Resolution Dopant Profiling Using a Tunable AC Scanning Tunneling Microscope | |
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SCaMsim, A New Three-Dimensional Simulation Tool for Scanning Capacitance Microscopy | |
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Experimental Investigation and 3D Simulation of Contrast Reversal Effects in Scanning Capacitance Microscopy | |
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Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy | |
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Critical Analytical Techniques--Sims/Shallow Junction Analysis | |
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Ultra-shallow Junction Metrology Using SIMS: Obstacles and Advances | |
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High Depth Resolution Secondary Ion Mass Spectrometry (SIMS) Analysis of Si[subscript 1-x]Ge[subscript x]:C HBT Structures | |
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Neutron Activation Analysis for Calibration of Phosphorus Implantation Dose | |
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High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry | |
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Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization | |
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TOF-SIMS Quantification of Low Energy Arsenic Implants through Thin SiO[subscript 2] Layers | |
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Author Index | |
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Key Words Index | |