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List of Symbols | |
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Foreword | |
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Preface | |
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Crystalline Properties of Solids | |
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Introduction | |
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Crystal lattices and the seven crystal systems | |
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The unit cell concept | |
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Bravais lattices | |
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Point groups | |
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C[subscript s] group (plane reflection) | |
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C[subscript n] groups (rotation) | |
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C[subscript nh] and C[subscript nv] groups | |
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D[subscript n] groups | |
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D[subscript nh] and D[subscript nd] groups | |
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C[subscript i] group | |
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C[subscript 3i] and S[subscript 4] groups | |
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T group | |
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T[subscript d] group | |
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O group | |
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O[subscript h] group | |
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List of crystallographic point groups | |
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Space groups | |
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Directions and planes in crystals: Miller indices | |
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Real crystal structures | |
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Diamond structure | |
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Zinc blende structure | |
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Sodium chloride structure | |
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Cesium chloride structure | |
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Hexagonal close-packed structure | |
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Wurtzite structure | |
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Packing factor | |
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Summary | |
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Further reading | |
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Problems | |
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Electronic Structure of Atoms | |
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Introduction | |
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Spectroscopic emission lines and atomic structure of hydrogen | |
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Atomic orbitals | |
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Structures of atoms with many electrons | |
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Bonds in solids | |
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General principles | |
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Ionic bonds | |
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Covalent bonds | |
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Mixed bonds | |
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Metallic bonds | |
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Secondary bonds | |
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Introduction to energy bands | |
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Summary | |
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Further reading | |
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Problems | |
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Introduction to Quantum Mechanics | |
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The quantum concepts | |
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Blackbody radiation | |
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The photoelectric effect | |
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Wave-particle duality | |
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The Davisson-Germer experiment | |
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Elements of quantum mechanics | |
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Basic formalism | |
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General properties of wavefunctions and the Schrodinger equation | |
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Simple quantum mechanical systems | |
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Free particle | |
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Particle in a 1-D box | |
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Particle in a finite potential well | |
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Reciprocal lattice | |
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Summary | |
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Further reading | |
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Problems | |
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Electrons and Energy Band Structures in Crystals | |
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Introduction | |
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Electrons in a crystal | |
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Bloch theorem | |
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One-dimensional Kronig-Penney model | |
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Energy bands | |
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Nearly-free electron approximation | |
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Tight binding approximation | |
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Heisenberg uncertainty principle | |
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Dynamics of electrons in a crystal | |
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Fermi energy | |
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Electron distribution function | |
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Electrons and holes | |
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Band structures in real semiconductors | |
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First Brillouin zone of an fcc lattice | |
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First Brillouin zone of a bcc lattice | |
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First Brillouin zones of a few semiconductors | |
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Band structures in metals | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Low Dimensional Quantum Structures | |
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Introduction | |
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Density of states (3D) | |
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Direct calculation | |
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Other approach | |
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Two-dimensional structures: quantum wells | |
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Energy spectrum | |
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Density of states | |
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Effect of effective mass | |
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One-dimensional structures: quantum wires | |
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Zero-dimensional structures: quantum dots | |
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Optical properties of 3D and 2D structures | |
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Absorption coefficient | |
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Excitonic effects | |
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Examples of low dimensional structures | |
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Quantum wires | |
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Quantum dots | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Phonons | |
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Introduction | |
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Interaction of atoms in crystals: origin and formalism | |
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One-dimensional monoatomic harmonic crystal | |
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Traveling wave formalism | |
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Boundary conditions | |
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Phonon dispersion relation | |
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Sound velocity | |
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One-dimensional diatomic harmonic crystal | |
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Formalism | |
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Phonon dispersion relation | |
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Extension to three-dimensional case | |
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Phonons | |
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Summary | |
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Further reading | |
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Problems | |
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Thermal Properties of Crystals | |
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Introduction | |
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Phonon density of states (Debye model) | |
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Debye model | |
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Phonon density of states | |
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Heat capacity | |
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Lattice contribution to the heat capacity (Debye model) | |
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Electronic contribution to the heat capacity | |
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Thermal expansion | |
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Thermal conductivity | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Equilibrium Charge Carrier Statistics in Semiconductors | |
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Introduction | |
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Density of states | |
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Effective density of states (conduction band) | |
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Effective density of states (valence band) | |
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Mass action law | |
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Doping: intrinsic vs. extrinsic semiconductor | |
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Charge neutrality | |
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Fermi energy as a function of temperature | |
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Carrier concentration in a semiconductor | |
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Summary | |
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Further reading | |
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Problems | |
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Non-Equilibrium Electrical Properties of Semiconductors | |
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Introduction | |
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Electrical conductivity | |
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Ohm's law in solids | |
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Case of semiconductors | |
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Hall effect | |
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P-type semiconductor | |
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N-type semiconductor | |
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Compensated semiconductor | |
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Charge carrier diffusion | |
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Diffusion currents | |
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Einstein relations | |
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Diffusion lengths | |
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Quasi-Fermi energy | |
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Carrier generation and recombination mechanisms | |
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Carrier generation | |
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Direct band-to-band recombination | |
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Schokley-Read-Hall recombination | |
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Auger band-to-band recombination | |
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Surface recombination | |
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Summary | |
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Further reading | |
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Problems | |
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Semiconductor Junctions | |
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Introduction | |
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Ideal p-n junction at equilibrium | |
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Ideal p-n junction | |
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Depletion approximation | |
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Built-in electric field | |
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Built-in potential | |
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Depletion width | |
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Energy band profile and Fermi energy | |
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Non-equilibrium properties of p-n junctions | |
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Forward bias: a qualitative description | |
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Reverse bias: a qualitative description | |
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A quantiative description | |
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Ideal p-n junction diode equation | |
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Minority and majority carrier currents in neutral regions | |
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Deviations from the ideal p-n diode case | |
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Avalanche breakdown | |
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Zener breakdown | |
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Metal-semiconductor junctions | |
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Formalism | |
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Schottky and ohmic contacts | |
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Summary | |
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Further reading | |
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Problems | |
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Compound Semiconductors and Crystal Growth Techniques | |
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Introduction | |
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III-V semiconductor alloys | |
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III-V binary compounds | |
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III-V ternary compounds | |
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III-V quaternary compounds | |
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Bulk single crystal growth techniques | |
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Czochralski growth method | |
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Bridgman growth method | |
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Float-zone crystal growth method | |
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Crystal wafer fabrication | |
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Epitaxial growth techniques | |
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Liquid phase epitaxy | |
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Vapor phase epitaxy | |
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Metalorganic chemical vapor deposition | |
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Molecular beam epitaxy | |
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Ex-situ characterization of epitaxial thin films | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Semiconductor Device Technology | |
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Introduction | |
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Oxidation | |
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Oxidation process | |
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Modeling of oxidation | |
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Factors influencing oxidation rate | |
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Oxide thickness characterization | |
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Diffusion of dopants | |
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Diffusion process | |
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Constant-source diffusion: predeposition | |
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Limited-source diffusion: drive-in | |
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Junction formation | |
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Ion implantation of dopants | |
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Ion generation | |
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Parameters of ion implantation | |
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Ion range distribution | |
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Characterization of diffused and implanted layers | |
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Sheet resistivity | |
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Junction depth | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Semiconductor Device Processing | |
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Introduction | |
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Photolithography | |
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Mask fabrication | |
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Positive and negative resists | |
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Exposure and developing | |
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Direct patterning and lift-off techniques | |
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Electron-beam lithography | |
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Electron-beam lithography system | |
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Electron-beam lithography process | |
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Parameters of electron-beam lithography | |
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Multilayer resist systems | |
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Examples of structures | |
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Etching | |
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Wet chemical etching | |
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Plasma etching | |
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Reactive ion etching | |
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Sputter etching | |
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Ion milling | |
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Metallization | |
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Metal interconnections | |
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Vacuum evaporation | |
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Sputtering deposition | |
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Packaging of devices | |
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Dicing | |
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Wire bonding | |
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Packaging | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Transistors | |
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Introduction | |
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Overview of amplification and switching | |
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Bipolar junction transistors | |
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Principles of operation for bipolar junction transistors | |
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Amplification process using BJTs | |
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Electrical charge distribution and transport in BJTs | |
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Current transfer ratio | |
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Heterojunction bipolar transistors | |
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AlGaAs/GaAs HBT | |
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GaInP/GaAs HBT | |
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Field effect transistors | |
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Gate control | |
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Current-voltage characteristics | |
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Summary | |
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References | |
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Problems | |
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Semiconductor Lasers | |
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Introduction | |
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Types of lasers | |
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General laser theory | |
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Stimulated emission | |
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Resonant cavity | |
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Waveguides | |
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Laser propagation and beam divergence | |
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Waveguide design considerations | |
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Ruby laser | |
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Semiconductor lasers | |
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Population inversion | |
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Threshold condition and output power | |
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Homojunction Laser | |
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Heterojunction lasers | |
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Device Fabrication | |
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Separate confinement and quantum well lasers | |
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Laser packaging | |
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Distributed feedback lasers | |
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Material choices for common interband lasers | |
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Quantum cascade lasers | |
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Type II lasers | |
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Vertical cavity surface emitting lasers | |
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Low dimensional lasers | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Photodetectors | |
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Introduction | |
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Electromagnetic radiation | |
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Photodetector parameters | |
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Responsivity | |
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Noise in photodetectors | |
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Noise mechanisms | |
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Detectivity | |
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Frequency response | |
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Thermal detectors | |
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Photon detectors | |
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Photoconductive detectors | |
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Photovoltaic detectors | |
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Detectivity in photovoltaic detectors | |
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Examples of photon detectors | |
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P-i-n photodiodes | |
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Avalanche photodiodes | |
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Schottky barrier photodiodes | |
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Metal-semiconductor-metal photodiodes | |
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Type II superlattice photodetectors | |
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Quantum well intersubband photodetectors | |
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Photoelectromagnetic detectors | |
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Summary | |
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References | |
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Further reading | |
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Problems | |
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Appendix | |
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Index | |