Fundamentals of III-V Devices HBTs, MESFETs, and HFETs/HEMTs

ISBN-10: 0471297003

ISBN-13: 9780471297000

Edition: 1999

Authors: William Liu
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Description: Heterojunction bipolar transistors, a specialised form of transistor with high speed and low power requirements, provide superior performance over silicon bipolar transistors which are ideally suited for cellular and wireless communications.

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Book details

List price: $216.00
Copyright year: 1999
Publisher: John Wiley & Sons, Incorporated
Publication date: 4/7/1999
Binding: Hardcover
Pages: 520
Size: 6.54" wide x 9.41" long x 1.24" tall
Weight: 2.068
Language: English

WILLIAM LIU, PhD, is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has been TI's lead contact in mentoring the development of BSIM4 model equations with UC Berkeley, and has been in charge of the modeling development for LDMOS/DEMOS and RF-CMOS in TI's SPICE Modeling Laboratory. Dr. Liu has authored/coauthored five book chapters, and has written more than fifty journal papers on modeling, device characterization, and fabrication. Dr. Liu has also published two books on III-V device technologies. Dr. Liu holds sixteen U.S. patents and is a senior member of IEEE.

Basic Properties and Device Physics of III-V Materials
Two-Terminal Heterojunction Devices
HBT D.C. Characteristics
HBT High-Frequency Properties
FET D.C. Characteristics
FET High-Frequency Properties
Transistor Fabrication and Device Comparison
Appendices
Index
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