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| Device Physics | |
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| Semiconductors | |
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| Generation and Recombination | |
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| Extrinsic Semiconductors | |
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| Diffusion and Drift | |
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| PN Junctions | |
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| Depletion Regions | |
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| PH Diodes | |
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| Schottky Diodes | |
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| Zener Diodes | |
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| Ohmic Contacts | |
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| Bipolar Junction Transistors | |
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| Beta | |
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| I-V Characteristics | |
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| MOS Transistors | |
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| Threshold Voltage | |
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| I-V Characteristics | |
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| JFET Transistors | |
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| Semiconductor Fabrication | |
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| Silicon Manufacture | |
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| Crystal Growth | |
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| Wafer Manufacturing | |
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| The Crystal Structure of Silicon | |
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| Photolithography | |
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| Photoresists | |
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| Photomasks and Reticles | |
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| Patterning | |
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| Oxide Growth and Removal | |
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| Oxide Growth and Deposition | |
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| Oxide Removal | |
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| Other Effects of Oxide Growth and Removal | |
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| Local Oxidation of Silicon (LOCOS) | |
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| Diffusion and Ion Implantation | |
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| Diffusion | |
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| Other Effects of Diffusion | |
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| Ion Implantation | |
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| Silicon Deposition | |
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| Epitaxy | |
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| Polysilicon Deposition | |
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| Metallization | |
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| Deposition and Removal of Aluminum | |
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| Refractory Barrier Metal | |
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| Silicidation | |
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| Interlevel Oxide, Interlevel Nitride, and Protective Overcoat | |
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| Assembly | |
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| Mount and Bond | |
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| Packaging | |
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| Representative Processes | |
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| Standard Bipolar | |
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| Essential Features | |
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| Fabrication Sequence | |
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| Available Devices | |
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| Process Extensions | |
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| Polysilicon-Gate CMOS | |
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| Essential Features | |
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| Fabrication Sequence | |
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| Available Devices | |
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| Process Extensions | |
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| Analog BiCMOS | |
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| Essential Features | |
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| Fabrication Sequence | |
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| Available Devices | |
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| Process Extensions | |
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| Failure Mechanisms | |
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| Electrical Overstress | |
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| Electrostatic Discharge (ESD) | |
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| Electromigration | |
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| The Antenna Effect | |
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| Contamination | |
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| Dry Corrosion | |
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| Mobile Ion Contamination | |
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| Surface Effects | |
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| Hot Carrier Injection | |
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| Parasitic Channels and Charge Spreading | |
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| Parasitics | |
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| Substrate Debiasing | |
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| Minority-Carrier Injection | |
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| Resistors | |
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| Resistivity and Sheet Resistance | |
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| Resistor Layout | |
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| Resistor Variability | |
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| Process Variation | |
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| Temperature Variation | |
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| Nonlinearity | |
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| Contact Resistance | |
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| Resistor Parasitics | |
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| Comparison of Available Resistors | |
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| Base Resistors | |
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| Emitter Resistors | |
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| Base Pinch Resistors | |
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| High-Sheet Resistors | |
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| Epi Pinch Resistors | |
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| Metal Resistors | |
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| Poly Resistors | |
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| NSD and PSD Resistors | |
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| N-Well Resistors | |
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| Thin-Film Resistors | |
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| Adjusting Resistor Values | |
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| Tweaking Resistors | |
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| Trimming Resistors | |
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| Capacitors | |
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| Capacitance | |
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| Capacitor Variability | |
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| Process Variation | |
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| Voltage Modulation and Temperature Variation | |
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| Capacitor Parasitics | |
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| Comparison of Available Capacitors | |
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| Base-Emitter Junction Capacitors | |
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| MOS Capacitors | |
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| Poly-Poly Capacitors | |
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| Miscellaneous Styles of Capacitors | |
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| Matching of Resistors and Capacitors | |
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| Measuring Mismatch | |
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| Causes of Mismatch | |
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| Random Statistical Fluctuations | |
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| Process Biases | |
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| Pattern Shift | |
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| Variations in Polysilicon Etch Rate | |
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| Diffusion Interactions | |
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| Stress Gradients and Package Shifts | |
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| Temperature Gradients and Thermoelectrics | |
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| Electrostatic Interactions | |
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| Rules for Device Matching | |
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| Rules for Resistor Matching | |
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| Rules for Capacitor Matching | |
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| Bipolar Transistors | |
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| Topics in Bipolar Transistor Operation | |
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| Beta Rolloff | |
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| Avalanche Breakdown | |
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| Thermal Runaway and Secondary Breakdown | |
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| Saturation in NPN Transistors | |
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| Saturation in Lateral PNP Transistors | |
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| Parasitics of Bipolar Transistors | |
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| Standard Bipolar Small-Signal | |