Dilute Nitride Semiconductors

Name: Dilute Nitride Semiconductors
Price: 238.03 USD
Availability: InStock
ISBN: 9780080445021

ISBN-10: 0080445020

ISBN-13: 9780080445021

Edition: 2005

Authors: Mohamed Henini

List price: $325.00

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Description:

* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 m and 1.55 m are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long…

Book details

List price: $325.00
Copyright year: 2005
Publisher: Elsevier Science & Technology
Publication date: 12/15/2004
Binding: Hardcover
Pages: 640
Size: 6.50" wide x 9.45" long x 1.00" tall
Weight: 2.838
Language: English

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published 700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.



Contents


Preface v



Mbe Growth and Characterization of Long Wavelength Dilute Nitride Iiiv Alloys



Introduction



MBE Growth of Dilute IIIV Nitrides



Dilute Nitride Characterization



Energy Band and Carrier Transport Properties



Annealing and NIn Nearest Neighbor Effects



Summary Acknowledgements


References



Epitaxial Growth of Dilute Nitrides By Metal-Organic Vapour Phase Epitaxy



Introduction



Epitaxial Growth of GaInAsN-based Structures



Long Wavelength GaAs-based Laser Performances



Conclusion


Acknowledgements


References



The Chemical Beam Epitaxy of Dilute Nitride Alloy Semiconductors



Introduction to Dilute Nitride Semiconductors



The Chemical Beam Epitaxial/Metalorganic Molecular Beam Epitaxial (CBE/MOMBE) Growth Process



CBE of Dilute Nitride Semiconductors



Fundamental Studies of GaNx As (12 x ) Band Structure



The Compositions and Properties of Dilute Nitrides Grown by CBE



CBE-grown Dilute Nitride Devices



The Potential for Production CBE of Dilute Nitrides



Conclusions


Acknowledgements


References



Mombe Growth and Characterization Of Iiiv-N Compounds and Application to Inas Quantum Dots



Introduction



Mombe Growth and Characterization of GaAsN



Relation of In and N Incorporations in the Growth of GaInNAs



Growth and Characterization of GaAsNSe New Alloy



Application of GaAsN to InAs Quantum Dots



Summary


Acknowledgements


References



Recent Progress in Dilute Nitride Quantum Dots



Self-organized Quantum Dots



Dilute Nitride Quantum Dots



Recent Experimental Progress in GaInNAS QDS



Other Kinds of Dilute Nitride QDs



Summary and Future Challenges in Dilute Nitride QDs: Acknowledgements: References



Physics of Isoelectronic Dopants in Gaas



Nitrogen Isoelectronic Impurities



The Failure of the Virtual Crystal Approximation



Prevalent Theoretical Models on Dilute Nitrides



Electroreflectance Study of GaAsN



Resonant Raman Scattering Study of Conduction Band States



Compatibility with other Experimental Results



A Complementary Alloy: GaAsBi



Summary



Conclusion


References



Measurement of Carrier Localization Degree, Electron Effective Mass, And Exciton Size in In x Ga1 2 x As 1 2 y N y Alloys



Introduction



Experimental



Single Carrier Localization in In x Ga1 2 x As 1 2 y N y



Measurement of the Electron Effective Mass and Exciton Wave function Size



Conclusions


Acknowledgements


References



Probing the Unusual Band Structure of Dilute Ga(Asn)Quantum Wells By Magneto-Tunnelling Spectroscopy and Other Techniques



Introduction



Resonant Tunnelling Diodes Based on Dilute Nitrides



Magneto-Tunnelling Spectroscopy to Probe the Conduction Band Structure of Dilute Nitrides



Electronic Properties: From the Very Dilute Regime ( , 0.1%) to the Dilute Regime



Conduction in Dilute Nitrides and Future Prospects



Summary and Conclusions


Acknowledgements


References



Photo- and Elect