Nitrides and Related Wide Band Gap Materials

Name: Nitrides and Related Wide Band Gap Materials
Price: 26.18 USD
Availability: InStock
ISBN: 9780080436159

ISBN-10: 0080436153

ISBN-13: 9780080436159

Edition: 1999

Authors: A. Hangleiter, J. -Y. Duboz, K. Kishino, F. A. Ponce

List price: $225.00

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Description:

The Symposium on 'Nitrides and related wide band gap materials' at the 1998 Spring Meeting of the European Materials Research Society (E-MRS) in Strasbourg, France, was the third Symposium of its kind at an E-MRS meeting. Beginning in 1996, these Symposia enjoyed a steadily increasing popularity among European and international nitride researchers. Contributions covered the areas of hetero-epitaxy, bulk growth, structural, electrical and optical characterisation and device fabrication. Researchers from about 20 different countries presented their work at this symposium. Naturally, most papers were from within Europe (Germany, France, Russia and the United Kingdom) but there was also a…

Book details

List price: $225.00
Copyright year: 1999
Publisher: Elsevier Science & Technology
Publication date: 8/11/1999
Binding: Hardcover
Pages: 432
Size: 7.00" wide x 10.00" long x 1.00" tall
Weight: 3.102



Chapter headings and selected papers


Preface


Bulk Growth and Hydride Vapor Phase Epitaxy


High pressure fabrication and processing of GaN:Mg



Metalorganic Vapor Phase Eqitaxy


Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation



Molecular Beam Epitaxy


Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers



Lateral Growth


Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy (K. Hiramatsu et al.). Luminescence, Excitons and Optical Properties


Luminescence in III-nitrides (B. Monemar ). Structural Properties


X-ray analysis of the texture of heteroepitaxial gallium nitride films



Characterization


Raman spectroscopy of disorder effects in Al x Ga 1 _ x N solid solutions



First Principles Calculations


Lattice dynamics of boron nitride



Properties of InGaN


Influence of strain and buffer layer type on in incorporation during GaInN MOVPE



Quantum Wells and Nanostructures


Optical properties of InGaN quantum wells



Processing and Contacts


Smooth GaN surfaces by photoinduced electro-chemical etching



Lasers and LED's


Theoretical optical gain in InGaN quantum wells



Electronic Devices and Photodetectors


Microwave electronics device applications of AIGaN/GaN heterostructures