| Preface | |
| Sponsors | |
| Contents | |
| Radiative processes in bulk crystalline silicon | p. 1 |
| Different Er centres in Si and their use for electroluminescent devices | p. 9 |
| Understanding and control of the erbium non-radiative de-excitation processes in silicon | p. 19 |
| Photoluminescence of porous silicon surfaces stabilized through Lewis acid mediated hydrosilylation | p. 29 |
| Field-induced functions of porous Si as a confined system | p. 37 |
| All porous silicon microcavities: growth and physics | p. 43 |
| The integration of nanoscale porous silicon light emitters: materials science, properties, and integration with electronic circuitry | p. 53 |
| Optical band gap of Si nanoclusters | p. 65 |
| Visible light emission from Si/SiO[subscript 2] superlattices in optical microcavities | p. 75 |
| Light-emitting structures based on nanocrystalline (Si/CaF[subscript 2]) multiquantum wells | p. 81 |
| Characterization of ITO/porous silicon LED structures | p. 91 |
| Strongly nonlinear luminescence in oxidized porous silicon films | p. 99 |
| Local order in light emitting porous silicon studied by XEOL and TEY | p. 103 |
| Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects | p. 109 |
| Tunability of the photoluminescence in porous silicon due to different polymer dielectric environments | p. 115 |
| Solvent detection using porous silicon optical waveguides | p. 119 |
| Light emission from porous silicon single and multiple cavities | p. 125 |
| Improvement of the luminescence in p-type as-prepared or dye impregnated porous silicon microcavities | p. 129 |
| Interference filters from porous silicon with laterally varying wavelength of reflection | p. 133 |
| Photoluminescence studies of porous silicon microcavities | p. 137 |
| Laser assisted chemical vapour deposition of silicon oxide layers | p. 141 |
| Comparative study of the oxidation of thin porous silicon layers studied by reflectometry, spectroscopic ellipsometry and secondary ion mass spectroscopy | p. 147 |
| Time-resolved photoluminescence study of the red emission in nanoporous SiGe alloys | p. 153 |
| X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films | p. 159 |
| On the morphology of stain-etched porous silicon films | p. 163 |
| Efficient luminescence from porous silicon | p. 169 |
| Anodic oxidation of porous silicon bilayers | p. 173 |
| Depth dependence of photoluminescence and chemical bonding in porous silicon | p. 179 |
| Ellipsometric study of refractive index anisotropy in porous silicon | p. 183 |
| Effect of oxygen implantation on ionoluminescence of porous silicon | p. 187 |
| Inelastic light scattering and X-ray diffraction from thick free-standing porous silicon films | p. 193 |
| Optical waveguides in porous silicon pre-patterned by localised nitrogen implantation | p. 199 |
| Determination of localized states in porous silicon | p. 203 |
| Application of stain-etched porous silicon in light emitting diodes and solar cells | p. 207 |
| Dose dependence of room temperature photoluminescence from Si implanted SiO[subscript 2] | p. 213 |
| Size dependent photoluminescence from Si nanoclusters produced by laser ablation | p. 217 |
| Optical properties of nanocrystalline silicon thin films produced by size-selected cluster beam deposition | p. 223 |
| The effect of annealing under hydrostatic pressure on the visible photoluminescence from Si[superscript +]-ion implanted SiO[subscript 2] films | p. 229 |
| Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO[subscript 2] fabricated by ion implantation | p. 235 |
| Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO[subscript 2] layers | p. 241 |
| Cathodoluminescence properties of silicon nanocrystallites embedded in silicon oxide thin films | p. 247 |
| Light emission from Si nanocrystals embedded in CaF[subscript 2] epilayers on Si(111): Effect of rapid thermal annealing | p. 253 |
| Ellipsometric spectroscopy study of photoluminescent Si/SiO[subscript 2] systems obtained by magnetron co-sputtering | p. 257 |
| Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide | p. 263 |
| Photoluminescence and paramagnetic defects in silicon-implanted silicon dioxide layers | p. 269 |
| Photoluminescence and electroluminescence investigations at Ge-rich SiO[subscript 2] layers | p. 275 |
| The origin of photoluminescence in Ge-implanted SiO[subscript 2] layers | p. 281 |
| Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO[subscript 2] layers | p. 285 |
| Excitation mechanism of Er in Si studied with a free-electron laser | p. 291 |
| EPR study of erbium-impurity complexes in silicon | p. 297 |
| The influence of oxygen on the lattice sites of rare earths in silicon | p. 303 |
| 1.54 [mu]m Light emission from Er/O and Er/F doped Si p-l-n diodes grown by molecular beam epitaxy | p. 309 |
| Excitation cross-section and lifetime of the excited state of erbium ions in avalanching light-emitting Si : Er : O diodes | p. 315 |
| Characteristics of surface and waveguide emitting SiGe : Er : O diodes | p. 321 |
| Er-doped edge emitting devices with a SiGe waveguide | p. 329 |
| Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon | p. 335 |
| Luminescence properties of Er[superscript 3+] in SiN/PS : Er | p. 339 |
| Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy | p. 343 |
| Erbium-doped silicon epilayers grown by liquid-phase epitaxy | p. 347 |
| 1.54 [mu]m Emission of pulsed-laser deposited Er-doped films on Si | p. 353 |
| Dislocation-related luminescence in Er-implanted silicon | p. 357 |
| EXAFS analysis of Er sites in Er-O and Er-F co-doped crystalline Si | p. 363 |
| Visible and infrared photoluminescence from Er-doped SiO[subscript x] | p. 369 |
| New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon | p. 375 |
| Erbium in silicon-germanium quantum wells | p. 381 |
| Optical properties of neodymium incorporated in porous silicon | p. 387 |
| A comparative study of donor formation in dysprosium, holmium, and erbium implanted silicon | p. 391 |
| Luminescence from porous silicon doped with erbium-ytterbium complexes | p. 395 |
| On the origin of 1.5 [mu]m luminescence in porous silicon coated with sol-gel derived erbium-doped Fe[subscript 2]O[subscript 3] films | p. 399 |
| a-SiO[subscript x] : H thin film light emitting devices for Si-based optoelectronics | p. 405 |
| Optical properties of Si/CaF[subscript 2] superlattices | p. 411 |
| Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment | p. 417 |
| Radiative emission properties of a-SiN : H based nanometric multilayers for light emitting devices | p. 423 |
| Scattering-controlled recombination of [Delta][subscript 2]-light-hole indirect excitons and apparently enhanced quantum confined Stark effect in tensilely strained Si[subscript 1-y]C[subscript y]/Si (0 0 1) quantum wells | p. 429 |
| Ultrafast carrier dynamics in wide gap hydrogenated amorphous silicon | p. 435 |
| Visible photoluminescence from a-Si : H/SiO[subscript 2] superlattices fabricated by UHV evaporation | p. 439 |
| Strong visible photoluminescence in amorphous SiO[subscript 2] and SiO[subscript 3] : H thin films prepared by thermal evaporation of SiO powder | p. 445 |
| Visible photoluminescence and its mechanisms from a-SiO[subscript 2] : H films with different stoichiometry | p. 449 |
| XPS investigation of a-Si : H thin films after light soaking | p. 455 |
| Growth and structural characterization of semiconducting Ru[subscript 2]Si[subscript 3] | p. 461 |
| Correlation between structural and optical properties of ion beam synthesized [beta]-FeSi[subscript 2] precipitates in Si | p. 467 |
| Fabrication of p-Si/[beta]-FeSi[subscript 2] balls/n-si structures by MBE and their electrical and optical properties | p. 473 |
| Electronic and optical properties of semiconducting iron disilicide | p. 479 |
| Room-temperature SiGe light-emitting diodes | p. 485 |
| C-induced Ge dots: enhanced light-output from Si-based nanostructures | p. 491 |
| Luminescence from Si-Si[subscript 1-x]Ge[subscript x]/Si[subscript 1-y]C[subscript y]-Si structures | p. 497 |
| Photoluminescence and X-ray characterisation of Si/Si[subscript 1-x]Ge[subscript x] multiple quantum wells | p. 503 |
| Short period (Si[subscript 6]Ge[subscript 4])[subscript p] superlattices: photoluminescence and electron microscopy study | p. 509 |
| Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface | p. 515 |
| Black-body emission from nanostructured materials | p. 519 |
| List of Contributors | p. 523 |
| Subject Index | p. 527 |
| Material Index | p. 531 |
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