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High-k/Metal-gate Devices for Future Cmos Technology:

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ISBN-10: 3836465299

ISBN-13: 9783836465298

Edition: 2008

Authors: Stephan Abermann

List price: $89.00
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The present work addresses the investigation of high-? dielectrics and their applicability in CMOS-devices, using metal-gate electrodes. The contents firstly include the deposition of zirconium dioxide and hafnium dioxide from the gas phase, using organometallic precursors, and their physico-chemical characterization. Furthermore, these material systems are investigated regarding their thermodynamical stability. In the following, MOS-capacitors are fabricated by the selective deposition of gate electrodes made from aluminum, molybdenum, nickel, or titanium-nitride, and characterized regarding their electrical behavior. Results within this work demonstrate that well balanced and correctly…    
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Book details

List price: $89.00
Copyright year: 2008
Publisher: Vdm Verlag Dr Mueller E K
Binding: Paperback
Pages: 180
Language: English