Ultra-Fast Gated P-Silicon Field Emitter Array Photocathode

Name: Ultra-Fast Gated P-Silicon Field Emitter Array Photocathode
Price: 58.97 USD
Availability: InStock
ISBN: 9783639253795

ISBN-10: 3639253795

ISBN-13: 9783639253795

Edition: N/A

Authors: Chin-Jen Chiang

List price: $76.00

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Description:

Field emitters are microfabricated sharp tip structures that facilitate the field emission process by concentrating the field at the tip. P- type Si based filed emitter arrays (FEAs) which, unlike metallic tips, exhibit a high photo- sensitivity saturation regime where the field emission current is limited due to carrier depletion and thus can be optically modulated. Optically modulating a gated p-Si FEA by ultra-short pulses can bypass the large gate-to-cathode capacitance in electrically gated cathodes thus potentially can generate ultra-short electron bunches as a cold cathode in Microwave Vacuum Electronics Devices (MVEDs) applications. We demonstrated optical-gating gated p-Si FEA…

Book details

List price: $76.00
Publisher: VDM Verlag Dr. Mueller e.K.
Binding: Paperback
Pages: 144
Size: 6.00" wide x 9.00" long x 0.34" tall
Weight: 0.484
Language: English