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Analysis and Simulation of Heterostructure Devices

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ISBN-10: 3211405372

ISBN-13: 9783211405376

Edition: 2004

Authors: Vassil Palankovski, R�diger Quay

List price: $169.99
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Book details

List price: $169.99
Copyright year: 2004
Publisher: Springer
Publication date: 12/18/2003
Binding: Hardcover
Pages: 289
Size: 6.10" wide x 9.25" long x 0.75" tall
Weight: 3.058
Language: English

Rüdiger Quay was born in Köln, Germany, in 1971. He studied physics and economics at the University of Bonn and the RWTH Aachen, where he received his "Diplom" in physics in 1997. In summer 1996 he held a visiting research position at Los Alamos National Laboratory, New Mexico, USA, for his master's thesis. In 1999, he was a visiting researcher at the Beckman Institute, University of Illinois, Urbana Champaign. In 2001 he received the doctoral degree in technical sciences with honors from the Technische Universität Wien, Austria. He has published more than 30 refereed publications and he is one of the authors of the book "Analysis and Simulation of Heterostructure Devices". His…    

List of Acronyms
List of Symbols
State-of-the-Art of Materials, Device Modeling, and RF Devices
Physical Models
RF Parameter Extraction for HEMTs and HBTs
Heterojunction Bipolar Transistors
High Electron Mobility Transistors
Novel Devices
A. App.: Benchmark Structures
List of Figures
List of Tables