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Planar Double-Gate Transistor From Technology to Circuit

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ISBN-10: 1402093276

ISBN-13: 9781402093272

Edition: 2009

Authors: Amara Amara, Olivier Rozeau

List price: $136.00
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Description:

This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring.Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes as planned by the current ITRS Roadmap.
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Book details

List price: $136.00
Copyright year: 2009
Publisher: Springer London, Limited
Publication date: 1/30/2009
Binding: Hardcover
Pages: 211
Size: 6.50" wide x 9.50" long x 0.50" tall
Weight: 1.034
Language: English

Introduction
Multiple Gate Technologies
Introduction
Advantages of multiple gate technologies
Planar double gate technologies
Non planar multiple gate technologies
Conclusions and perspectives. References
Compact Modeling of Independent Double-Gate Mosfet: a Physical Approach
Introduction
Drift-diffusion Drain current modeling
Ballistic current in the subthreshold regime
Conclusion.References
Compact Modeling of Double Gate MOSFET for IC Design
Introduction
Modeling of Independent Gate MOSFET With Independent Driven Gates
Long channel IDG MOSFET Threshold voltage based model
Short channel effects
Conclusion.References
Low Frequency Noise in Double-Gate SOI CMOS Devices
Introduction
Low Frequency Noise Analysis
Results and Discussions
Conclusion.References
Analog Circuit Design
Double Gate MOSFET In Analog Design
Current Mirrors
Differential Pairs
Low Voltage OTAS
High Speed Comparators
Conclusion.References
Logic Circuit Design With DGMOS Devices
DGMOS characteristics and impact on digital design
Standard cells using DGMOS
Ultra Low Power full-adder using Double gate SOI devices
DGMOS DEVICE based reconfigurable cells. References
SRAM Circuit Design
Introduction
SRAM memories
Double gate 6T SRAM memories
Double gate 4T & 5T SRAM memories
References
Conclusion
Appendix
Index