HEMTS and HBTS Devices Devices, Fabrication and Circuits

Name: HEMTS and HBTS Devices Devices, Fabrication and Circuits
Availability: OutOfStock
ISBN: 9780890064016

ISBN-10: 0890064016

ISBN-13: 9780890064016

Edition: 1990

Authors: Fazal Ali, Aditya Gupta

List price: $163.00

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Description:

Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.

Book details

List price: $163.00
Copyright year: 1990
Publisher: Artech House, Incorporated
Binding: Hardcover
Pages: 448
Size: 6.50" wide x 9.50" long x 1.00" tall
Weight: 1.540
Language: English

Preface	p. xi
HEMTs and HBTs: Introduction and Overview	p. 1
Introduction	p. 1
High Electron Mobility Transistors (HEMTs)	p. 3
Heterojunction Bipolar Transistors (HBTs)	p. 5
Summary	p. 8
HEMT Device Physics and Models	p. 11
Introduction	p. 11
Carrier Transport in the HEMT Structure	p. 13
Band Diagram and 2-DEG in AlGaAs/GaAs Systems	p. 14
2-DEG Carrier Mobility and Saturation Velocity	p. 18
2-DEG Charge-Control by Schottky Barrier Gate	p. 22
Ohmic Contacts and Series Resistances	p. 26
The Charge-Control Model	p. 29
dc and Small-Signal Characteristics	p. 29
Temperature Stability of Device Operation	p. 36
Low-Frequency (LF) Equivalent Network Model	p. 39
The Unity-Current-Gain Frequency	p. 44
Low-Frequency 1/f and g-r Noise Sources	p. 47
High-Frequency (HF) Limitations	p. 51
HF Equivalent Network for the Intrinsic HEMT	p. 52
Determination of Equivalent Network Parameters	p. 57
Power Gain and Stability	p. 61
HF Noise Sources and Performance of HEMTs	p. 63
HEMT Devices and Circuit Applications	p. 77
Introduction	p. 77
GaAs-Based Conventional HEMT	p. 77
Material Considerations	p. 79
Device Fabrication	p. 84
dc and RF Performance	p. 91
Outlook	p. 99
GaAs-Based Pseudomorphic HEMT	p. 103
Material Structure	p. 103
Applications of Pseudomorphic HEMTs	p. 111
InP-Based Pseudomorphic HEMT	p. 123
Introduction	p. 123
Material Properties and Growth	p. 124
Device Fabrication and Performance	p. 134
Circuit Performance	p. 143
HEMT Analog Circuit Applications	p. 148
Introduction	p. 148
HEMT Low-Noise Amplifiers	p. 148
HEMT Wideband Amplifiers	p. 150
HEMT Power Amplifiers	p. 159
HEMT Control Circuits	p. 163
HEMT Mixers and Converters	p. 168
HEMT Oscillators	p. 174
HEMT Frequency Doublers	p. 175
Device Testing	p. 177
Conclusion	p. 182
HEMT Reliability	p. 184
Reliability Testing of Low-Noise HEMTs	p. 184
Reliability of Low-Noise HEMTs	p. 186
Summary	p. 188
HBT Device Physics and Models	p. 191
Introduction	p. 191
Carrier Transport in HBT Structures	p. 195
Band Diagram and Current Transport	p. 196
Recombination Processes	p. 200
Drift, Diffusion, and Saturation Velocity	p. 202
Ohmic Contacts and Series Resistances	p. 204
The Charge-Control Model	p. 206
dc and Small-Signal Characteristics	p. 207
LF Equivalent Network Model and Unity Current Gain Frequency	p. 212
The Switching Limitations	p. 215
Low-Frequency 1/f Noise and g-r Noise Sources	p. 219
High Frequency Limitations	p. 224
HF Two-port Parameters and Equivalent Network Model	p. 224
Determination of the Equivalent Network Parameters	p. 228
Power Gain and Stability	p. 234
HF Noise Sources and Noise Figures	p. 236
Power Density Limitations of HBTs	p. 241
Comparison of HBTs and HEMTs	p. 246
HBT Devices and Circuit Applications	p. 253
Introduction	p. 253
Comparison with GaAs MESFET and HEMT	p. 257
Comparison with Advanced Silicon Bipolar Transistor	p. 258
Device Structure	p. 260
Epitaxial Layer Growth	p. 266
Emitter-up versus Collector-up	p. 269
HBT Fabrication Technology	p. 270
Self-Aligned Contacts	p. 274
Planar Structures	p. 276
Representative HBT IC Process	p. 278
Technology Characterization	p. 281
HBT dc Characteristics	p. 282
HBT High-Frequency Characteristics	p. 286
Intrinsic HBT Linearity	p. 287
Intrinsic HBT Nonlinearity	p. 287
HBT Noise Performance	p. 290
Schottky Diode Characteristics	p. 291
Thin-Film Resistors	p. 291
Metal-Insulator-Metal (MIM) Capacitors	p. 292
HBT Device Modeling and Simulation	p. 292
Technology Qualification	p. 292
Power HBT Design Considerations	p. 301
Collector Design	p. 301
Device Impedance	p. 302
Size Considerations	p. 304
Thermal Considerations	p. 307
HBT Scaling	p. 311
HBT Monolithic Amplifiers	p. 316
HBT Complementary Amplifiers	p. 318
Circuit Applications	p. 322
Analog and Microwave Applications	p. 328
Microwave Oscillators	p. 333
Digital Applications	p. 341
Analog-to-Digital Conversion Applications	p. 345
Monolithically Combined Microwave-Digital Applications	p. 352
InP-Based HBT	p. 354
Reliability	p. 361
Index	p. 371
Table of Contents provided by Syndetics. All Rights Reserved.