Modeling and Characterization of RF and Microwave Power FETs

Name: Modeling and Characterization of RF and Microwave Power FETs
Price: 144.27 USD
Availability: InStock
ISBN: 9780521870665

ISBN-10: 0521870666

ISBN-13: 9780521870665

Edition: 2007

Authors: John Wood, Peter H. Aaen, Jaime A. Plï¿½, John Wood

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Description:

RF power transistors have important applications in RF communication systems such as 2G and 3G, and WiFi/WiMax, as a component of power amplifiers. LDMOS (laterally-diffused metal oxide semiconductor) high power transistors are virtually ubiquitous in base stations and long transmitters in RF wireless communications, meaning that their growing development and implementation with changing communication standards, is an important area of research. This book describes how modern RF power transitor technology is developed and used, with particular focus on LDMOS and III-V devices. This book is suitable for pratictioners, graduate students, and academic researchers in the fields of RF and…

Book details

Copyright year: 2007
Publisher: Cambridge University Press
Publication date: 6/25/2007
Binding: Hardcover
Pages: 380
Size: 6.69" wide x 9.61" long x 0.87" tall
Weight: 1.760
Language: English

John Wood is the author of several prize-winning books of poetry and photographic criticism, including the recently released Selected Poems: 1968-1998. His essays on a wide variety of subjects have appeared in many books and journals. Wood is the editor of 21st: The Journal of Contemporary Photography.




RF and microwave power transistors



Compact modeling of high-power FETs



Electrical measurement techniques



Passive components : simulation and modeling



Thermal characterization and modeling



Modeling the active transistor



Function approximation for compact modeling



Model implementation in CAD tools



Model validation