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| Preface to Third Edition | |
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| Resistivity | |
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| Introduction | |
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| Two-Point Versus Four-Point Probe | |
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| Wafer Mapping | |
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| Resistivity Profiling | |
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| Contactless Methods | |
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| Conductivity Type | |
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| Strengths and Weaknesses | |
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| Resistivity as a Function of Doping Density | |
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| Intrinsic Carrier Density | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Carrier and Doping Density | |
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| Introduction | |
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| Capacitance-Voltage (C-V) | |
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| Current-Voltage (I-V) | |
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| Measurement Errors and Precautions | |
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| Hall Effect | |
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| Optical Techniques | |
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| Secondary Ion Mass Spectrometry (SIMS) | |
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| Rutherford Backscattering (RBS) | |
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| Lateral Profiling | |
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| Strengths and Weaknesses | |
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| Parallel or Series Connection? | |
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| Circuit Conversion | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Contact Resistance and Schottky Barriers | |
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| Introduction | |
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| Metal-Semiconductor Contacts | |
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| Contact Resistance | |
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| Measurement Techniques | |
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| Schottky Barrier Height | |
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| Comparison of Methods | |
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| Strengths and Weaknesses | |
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| Effect of Parasitic Resistance | |
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| Alloys for Contacts to Semiconductors | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Series Resistance, Channel Length and Width, and Threshold Voltage | |
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| Introduction | |
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| PN Junction Diodes | |
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| Schottky Barrier Diodes | |
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| Solar Cells | |
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| Bipolar Junction Transistors | |
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| MOSFETS | |
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| MESFETS and MODFETS | |
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| Threshold Voltage | |
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| Pseudo MOSFET | |
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| Strengths and Weaknesses | |
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| Schottky Diode Current-Voltage Equation | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Defects | |
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| Introduction | |
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| Generation-Recombination Statistics | |
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| Capacitance Measurements | |
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| Current Measurements | |
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| Charge Measurements | |
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| Deep-Level Transient Spectroscopy (DLTS) | |
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| Thermally Stimulated Capacitance and Current | |
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| Positron Annihilation Spectroscopy (PAS) | |
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| Strengths and Weaknesses | |
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| Activation Energy and Capture Cross-Section | |
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| Time Constant Extraction | |
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| Si and GaAs Data | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Oxide and Interface Trapped Charges, Oxide Thickness | |
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| Introduction | |
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| Fixed, Oxide Trapped, and Mobile Oxide Charge | |
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| Interface Trapped Charge | |
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| Oxide Thickness | |
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| Strengths and Weaknesses | |
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| Capacitance Measurement Techniques | |
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| Effect of Chuck Capacitance and Leakage Current | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Carrier Lifetimes | |
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| Introduction | |
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| Recombination Lifetime/Surface Recombination Velocity | |
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| Generation Lifetime/Surface Generation Velocity | |
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| Recombination Lifetime-Optical Measurements | |
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| Recombination Lifetime-Electrical Measurements | |
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| Generation Lifetime-Electrical Measurements | |
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| Strengths and Weaknesses | |
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| Optical Excitation | |
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| Electrical Excitation | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Mobility | |
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| Introduction | |
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| Conductivity Mobility | |
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| Hall Effect and Mobility | |
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| Magnetoresistance Mobility | |
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| Time-of-Flight Drift Mobility | |
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| MOSFET Mobility | |
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| Contactless Mobility | |
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| Strengths and Weaknesses | |
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| Semiconductor Bulk Mobilities | |
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| Semiconductor Surface Mobilities | |
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| Effect of Channel Frequency Response | |
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| Effect of Interface Trapped Charge | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Charge-based and Probe Characterization | |
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| Introduction | |
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| Background | |
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| Surface Charging | |
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| The Kelvin Probe | |
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| Applications | |
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| Scanning Probe Microscopy (SPM | |
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| Strengths and Weaknesses | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Optical Characterization | |
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| Introduction | |
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| Optical Microscopy | |
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| Ellipsometry | |
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| Transmission | |
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| Reflection | |
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| Light Scattering | |
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| Modulation Spectroscopy | |
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| Line Width | |
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| Photoluminescence (PL | |
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| Raman Spectroscopy | |
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| Strengths and Weaknesses | |
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| Transmission Equations | |
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| Absorption Coefficients and Refractive Indices for SelectedSemiconductors | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Chemical and Physical Characterization | |
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| Introduction | |
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| Electron Beam Techniques | |
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| Ion Beam Techniques | |
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| X-Ray and Gamma-Ray Techniques | |
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| Strengths and Weaknesses | |
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| Selected Features of Some Analytical Techniques | |
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| References | |
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| Problems | |
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| Review Questions | |
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| Reliability and Failure Analysis | |
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| Introduction | |
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| Failure Times and Acceleration Factors | |
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| Distribution Functions | |
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| Reliability Concerns | |
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| Failure Analysis Characterization Techniques | |
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| Strengths and Weaknesses | |
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| Gate Currents | |
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| References | |
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| Problems | |
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| Review Questions | |
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| List of Symbols | |
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| Abbreviations and Acronyms | |
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| Index | |