Analysis and Design of MOSFETs Modeling, Simulation and Parameter Extraction

Name: Analysis and Design of MOSFETs Modeling, Simulation and Parameter Extraction
Price: 169.17 USD
Availability: InStock
ISBN: 9780412146015

ISBN-10: 0412146010

ISBN-13: 9780412146015

Edition: 1998

Authors: J. J. Liou, Adelmo Ortiz-Conde, Francisco Garcia-Sanchez

List price: $169.99

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Description:

Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and…

Book details

List price: $169.99
Copyright year: 1998
Publisher: Springer
Publication date: 9/30/1998
Binding: Hardcover
Pages: 349
Size: 6.10" wide x 9.25" long x 1.00" tall
Weight: 3.388
Language: English



Preface



MOSFET physics and modeling



MOSFET simulation using device simulators



Extraction of the threshold voltage of MOSFETs



Methods for extracting the effective channel length of MOSFETs



Extraction of the source and drain series resistances of MOSFETs



Parameter extraction of lightly-doped drain (LDD) MOSFETs



Physical constants and unit conversions



Properties of germanium, silicon, and gallium arsenide (at 300 K)



Properties of SiO[subscript 2] and Si[subscript 3]N[subscript 4] (at 300 K)



Derivation of the integral function and its applications to parameter extraction


Subject index


About the authors