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| Preface | |
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| About the Editor | |
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| Contributors | |
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| Semiconductor Photoconductors for Visible to Far-Infrared Detection | |
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| Introduction | |
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| Mechanisms of Photon Absorption | |
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| Interaction with High-Energy Radiation | |
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| Intrinsic Absorption | |
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| Extrinsic Absorption Mechanisms | |
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| Absorption in Quantum Wells and Superlattices | |
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| Intrinsic Photoconductors | |
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| Figures of Merit | |
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| Conventional Intrinsic Photoconductors | |
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| Photoconductors for Ultrafast Optoelectronics | |
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| Alternate Modes of Operation and Device Design | |
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| Extrinsic Photoconductors | |
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| Operation of Extrinsic Photoconductors | |
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| Figures of Merit | |
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| Device Construction | |
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| Extending the Wavelength Response | |
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| Transient Behavior of Extrinsic Photoconductors | |
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| Blocked Impurity Band Detectors and the Solid-State Photomultiplier | |
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| Solid-State Photomultiplier | |
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| Quantum-Well Infrared Photodetectors | |
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| Conclusion | |
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| Acknowledgments | |
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| References | |
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| Resonant Cavity Enhanced Photodetectors | |
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| Introduction | |
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| Historical Perspective--Prior to the 1990s | |
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| Organization of the Chapter | |
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| Theoretical Formulation of Resonant Cavity Enhanced Photodetector Parameters | |
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| Analytical Formulation of the Quantum Efficiency for Resonant Cavity Enhanced Photodetectors | |
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| Standing Wave Effect | |
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| Resonant Cavity Enhancement of Quantum Efficiency | |
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| Wavelength Selectivity of Resonant Cavity Enhanced Photodetection | |
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| Angle Dependence of Quantum Efficiency | |
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| Nearly Unity Quantum Efficiency Photodetection | |
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| Limitations of Analytical Formulation | |
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| Numerical Calculation of Optical Response | |
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| Recursive Formulation | |
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| Scattering Matrix Method | |
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| High-Speed Properties of Resonant Cavity Enhanced Photodiodes | |
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| Theoretical Considerations | |
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| High-Speed Capabilities of Resonant Cavity Enhanced Photodetectors | |
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| External Circuitry and Packaging | |
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| Transient Simulation of Resonant Cavity Enhanced Photodiodes | |
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| Design Criteria for Resonant Cavity Enhanced Photodetectors | |
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| Evaluation of Various Resonant Cavity Enhanced Designs | |
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| Material Requirements for Resonant Cavity Enhanced Photodetection | |
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| Material System Combinations for Resonant Cavity Enhanced Photodetection | |
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| Review of Experimental Results | |
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| Characterization of Quantum Efficiency and Electrical Performance | |
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| Classification of Resonant Cavity Enhanced Photodetector Categories | |
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| Resonant Cavity Enhanced Photodetectors with High/Unity Efficiency | |
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| Resonant Cavity Enhanced Photodetectors for Optical Communications | |
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| Wavelength Selective Resonant Cavity Enhanced Photodetectors | |
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| Polarization Sensing with Resonant Cavity Enhanced Photodetectors | |
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| Resonant Cavity Enhanced Photodiodes Integrated with Light Emitters | |
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| Advanced Designs--Flat Spectral Response | |
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| Conclusions | |
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| Acknowledgments | |
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| References | |
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| Silicon and GaAs as Far-Infrared Detector Material | |
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| Introduction | |
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| Silicon Far-Infrared Detectors | |
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| GaAs Far-Infrared Detectors | |
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| Far-Infrared Absorption | |
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| Far-Infrared Absorption in GaAs | |
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| Far-Infrared Absorption in Silicon | |
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| Homojunction Interfacial Workfunction Internal Photoemission Detectors | |
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| Type-I Homojunction Interfacial Workfunction Internal Photoemission Detectors: N[subscript a] [ N[subscript c] (E[subscript F] ] E[superscript n]+[subscript c]) | |
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| Type-II Homojunction Interfacial Workfunction Internal Photoemission Detector: N[subscript c] [ N[subscript a] [ N[subscript 0] (E[superscript p]+[subscript v] ] E[subscript F] ] E[superscript i subscript v]) | |
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| Performance Improvements in Homojunction Interfacial Workfunction Internal Photoemission Detectors | |
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| Type-II Silicon Homojunction Interfacial Workfunction Internal Photoemission Detector | |
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| Type-III Homojunction Internal Photoemission Detector: N[subscript a] ] N[subscript 0] (E[subscript F] [ E[superscript i subscript v]) | |
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| Summary | |
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| Acknowledgment | |
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| References | |
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| Bulk Semiconductors for Infrared Applications | |
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| Overview | |
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| Material Preparation and Basic Characterization | |
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| Materials for Infrared Detection | |
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| Transition Metal-Doped II-VI Compounds for Tunable Midinfrared Lasers | |
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| Electro-optic and Nonlinear Optic Materials | |
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| Material Properties Relevant for Infrared Devices | |
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| Photorefractives | |
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| Optical Limiters | |
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| Solid-State Midinfrared Tunable Lasers | |
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| Optical Parametric Oscillators (OPO) | |
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| Infrared Optical Components | |
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| Conclusions | |
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| References | |
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| Photodetectors for Optical Fiber Communications | |
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| Introduction | |
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| Basic Principles | |
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| p-i-n Photodetectors | |
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| Introduction | |
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| Vertically Illuminated p-i-n Photodiode Structure | |
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| Edge-Illuminated Waveguide Photodiodes | |
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| Resonance Cavity-Enhanced Photodiodes | |
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| Effect of Packaging | |
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| Reliability | |
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| Schottky Barrier Photodetectors | |
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| Metal-Semiconductor-Metal Photodetectors | |
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| Introduction | |
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| Metal-Semiconductor-Metal Photodiode Structure and Performance | |
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| Avalanche Photodiodes | |
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| Introduction | |
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| Separate Absorption Grading Charge Sheet and Multiplication APDs | |
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| Superlattice APD | |
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| Resonant Cavity Encapsulated APD | |
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| Si-Based Photodetectors | |
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| InGaAs on Si-Based Photodetectors | |
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| Ge[subscript 1-x]C[subscript x]/Si-Based Photodetectors | |
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| Optical Receiver | |
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| Introduction | |
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| Hybrid Photoreceiver | |
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| Monolithic Photoreceiver | |
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| Summary | |
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| Acknowledgments | |
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| References | |
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| Germanium Dioxide-Based Glasses as Advanced Optical Sensors Materials | |
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| Introduction | |
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| Properties and Structure of Glass-Forming GeO[subscript 2] | |
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| X-Ray and Neutron Scattering Studies of GeO[subscript 2] | |
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| Infrared Spectroscopy Studies | |
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| Electron Paramagnetic Resonance Studies | |
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| Optical Properties | |
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| Properties and Structure of Binary Germanate Glasses | |
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| Properties and Structure of Ternary Germanate Glasses | |
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| Pseudoternary Fluoride-Containing Germanate Systems | |
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| Germanium Dioxide Based Glasses in Applications | |
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| References | |
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| High-Bandwidth Optical Networks and Communication | |
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| Introduction | |
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| Networks | |
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| Local Area Networks | |
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| Metropolitan Area and Wide Area Networks | |
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| Internet Protocol | |
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| Network Layers | |
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| Enabling Technologies and Transmission Systems | |
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| Optical Amplifiers | |
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| Transmission Systems Design | |
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| Computer Aided Design | |
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| Transmission | |
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| Linear Propagation | |
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| Single-Mode Dispersion and Dispersion Penalties | |
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| Nonlinear Propagation and the Nonlinear Schrodinger Equation | |
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| Wavelength-Division Multiplexing | |
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| Solitons | |
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| Soliton Optical Communications | |
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| Solitons and Polarization | |
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| Solitons and Amplification | |
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| Gordon-Haus Jitter and Timing Jitter Control | |
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| Dispersion Management and Dispersion-Managed Solitons | |
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| Wavelength-Division Multiplexing and Solitons | |
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| Systems Experiments | |
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| Femtosecond Propagation | |
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| Switching | |
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| Switches in Communications | |
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| Soliton All-Optical Switching | |
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| Coupled Higher-Order Equations | |
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| All-Optical Networks | |
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| Multihop Networks | |
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| Wavelength Routing Networks | |
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| Node Design | |
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| Crosstalk | |
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| Traffic Patterns and Demands | |
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| Routing and Wavelength Assignment | |
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| Free-Space Optical Propagation | |
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| Self-Focusing | |
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| Gigabit/sec Propagation | |
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| Terabit/sec Propagation | |
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| Summary | |
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| Acknowledgments | |
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| References | |
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| Index | |