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Design and Realization of Bipolar Transistors

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ISBN-10: 0471917001

ISBN-13: 9780471917007

Edition: 1988

Authors: Peter Ashburn

List price: $165.00
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Book details

List price: $165.00
Copyright year: 1988
Publisher: John Wiley & Sons, Incorporated
Publication date: 8/18/1988
Binding: Hardcover
Pages: 216
Size: 1.42" wide x 2.17" long
Weight: 0.946
Language: English

Series Preface
Preface
List of Symbols
Overview
Evolution of silicon bipolar technology
Evolution of heterojunction bipolar technology
Operating principles of the bipolar transistor
Bipolar Transistor Theory
Introduction
Components of base current
Fundamental equations
Base current
Current gain
Shallow emitters
Heavy doping effects
Extension of the simple theory
Junction breakdown
Bipolar Transistor Models
Transistor modelling
Ebers-Moll model
Small-signal hybrid-[Pi] model
Gummel-Poon model
Modelling the low-current gain
Forward transit time [tau[subscript F]]
Base resistance
Collector/base capacitance
The SPICE bipolar transistor model
Polysilicon Emitters
Introduction
Basic physics of the polysilicon emitter
Theory of polysilicon emitters
Emitter resistance
Design of practical polysilicon emitter transistors
SIS emitters
Heterojunction Emitters
Introduction
Theory of heterojunction emitters
GaAIAs/GaAs heterojunction emitters
Bandgap engineering
Bipolar Integrated Circuit Fabrication
Introduction
Buried layer and epitaxy
Isolation
Base
Emitter
Yield problems in bipolar processes
Analogue bipolar processes
Digital bipolar processes
GaAs/GaAIAs heterojunction bipolar processes
BICMOS processes
Optimization of High-Speed Bipolar Processes
Introduction
ECL propagation delay expression
Calculation of the electrical parameters
Comparison of conventional and self-aligned processes
Process optimization
App. 1 Bipolar transistor model parameters
App. 2 Fundamental physical constants
App. 3 Properties of silicon and gallium arsenide
App. 4 Properties of silicon dioxide
Index