Operation and Modeling of the MOS Transistor

ISBN-10: 0195170156
ISBN-13: 9780195170153
Edition: 3rd 2011
List price: $199.95
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Book details

List price: $199.95
Edition: 3rd
Copyright year: 2011
Publisher: Oxford University Press, Incorporated
Publication date: 10/29/2010
Binding: Hardcover
Pages: 752
Size: 7.75" wide x 9.50" long x 1.25" tall
Weight: 3.146

Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University.

Semiconductors, Junctions, and Mosfet Overview
Introduction
Semiconductors
Intrinsic Semiconductors, Free Electrons, and Holes
Extrinsic Semiconductors
Equilibrium in the Absence of Electric Field
Equilibrium in the Presence of Electric Field
Semiconductors in Nonequilibrium
Quasi-Fermi Levels
Relations between Charge Density, Electric Field, and Potentials Poisson's Equation
Conduction
Transit Time
Drift
Diffusion
Total Current
Contact Potentials
Thepn Junction
Overview of the MOS Transistors
Basic Structure
A Qualitative Description of MOS Transistor Operation
A Fluid Dynamical Analog
MOS Transistor Characteristics
Fabrication Processes and Device Features
A Brief Overview of This Book
References
Problems
The Two Terminal MOS Structure
Introduction
The Flat-Band Voltage
Potential Balance and Charge Balance
Effect of Gate - Body Voltage on Surface Condition
Flat -Band Condition
Accumulation
Depletion and Inversion
General Analysis
Accumulation and Depletion
Inversion
General Relations and Regions of Inversion
Strong Inversion
Weak Inversion
Moderate Inversion
Small - Signal Capacitance
Summary of Properties of the Regions of Inversion
References
Problems
The Three Terminal MOS Structure
Introduction
Contacting the Inversion Layer
The Body Effect
Regions of Inversion
Approximate Limits
Strong Inversion
Weak Inversion
A "CB Control" Point of View
Fundamentals
The "pinchoff voltage"
References
Problems
The Four - Terminal MOS Transistor
Introduction
Transistor Regions of Operation
Complete All - Region Model
Current Equations
Simplified All - Region Models
Linearizing the Depletion Region Charge
Body -Referenced Simplified All - Region Models
Source - Referenced Simplified All - Region Models
Charge Formulation of Simplified All-Region models
Models Based on Quasi - Fermi Potentials
Regions of Inversion in Terms of Terminal Voltages
Strong Inversion
Complete Strong -Inversion Model
Body - Referenced Simplified Strong Inversion Model
Source - Referenced Simplified Strong - Inversion Model
Model Origin Summary
Weak Inversion
Special Conditions in Weak Inversion
Moderate Inversion and Single - Piece Models
Source - Referenced vs. Body - Referenced Modeling
Effective Mobility
Effect of Extrinsic Source and Drain Series Resistances
Temperature Effects
Breakdown
The p-Channel MOS Transistor
Enhancement - Mode and Depletion - Mode Transistors
Model Parameter Values, Model Accuracy, and Model Comparison
References
Problems
Small Dimension Effects
Introduction
Carrier Velocity Saturation
Channel Length Modulation
Charge Sharing
Introduction
Short - Channel Devices
Narrow - Channel Devices
Limitations of Charge Sharing Models
Drain - Induced Barrier Lowering
Punchthrough
Combining Several Small - Dimension Effects Into One Model - A Strong Inversion Example
Hot Carrier Effects
Impact Ionization
Velocity Overshoot and Ballistic Opeation
Polysilicon Depletion
Quantum Mechanical Effects
DC Gate Current
Junction Leakage
Band - to - Band Tunneling
GIDL
Leakage Currents - Examples
The Quest for Ever - Smaller Devices
Introduction
Classical Scaling
Modern Scaling
References
Problems
The MOS Transistor In Dynamic Operation - Large Signal Modeling
Introduction
Quasi - Static Operation
Terminal Currents in Quasi - Static Operation
Evaluation of Intrinsic Chargers in Quasi - Static Operation
Introduction
Strong Inversion
Moderate Inversion
Weak Inversion
All - Region Model
Depletion and Accumulation
Plots of Chargers versus VGS
Use of Intrinsic Chargers in Evaluation the Terminal Currents
Transit Time Under DC Conditions
Limitations of the Quasi - Static Model
Non - Quasi - Static Modeling
Introduction
The Continuity Equation
Non - Quasi - Static Analysis
Extrinsic Parasitics
Extrinsic Capacitances
Extrinsic Resistance
Temperature Dependence
Simplified Models
References
Problems
Small - Signal Modeling for Low and Medium Frequencies
Introduction
A Low - Frequency Small - Signal Model for the Intrinsic Part
Introduction
Small - Signal Model for the Drain - Source Current
Small - Signal Model for the Gate and Body Current
Complete Low - Frequency Small - Signal Model for the Intrinsic Part
Strong Inversion
Weak Inversion
Moderate Inversion
All - Region Models
A Medium - Frequency Small - Signal Model for the Intrinsic Part
Introduction
Intrinsic Capacitances
Including the Extrinsic Part
Noise
Introduction
White Noise
Flicker Noise
Noise in Extrinsic Resistances
Including Noise in Small - Signal Circuits
All - Region Models
References
Problems
High Frequency Small - Signals Models
Introduction
A Complete Quasi - Static Model
Complete Description of Intrinsic Capacitance Effects
Small - Signal Equivalent Circuit Topologies
Evaluation of Capacitances
Frequency Region of Validity
y- Parameter Models
Non - Quasi - Static Models
Introduction
A Non - Quasi - Static Strong - Inversion Model
Other Approximation and Higher - Oder Models
Model Comparison
High - Frequency Noise
Consideration In MOSFet Modeling for RF Applications
References
Problems
Substrate Nonuniformity and Structural Effects
Introduction
Ion Implantation and Substrate Nonuniformity
Substrate Transverse Nonuniformity
Preliminaries
Threshold Voltage
Drain Current
Buried Channel Devices
Substrate Lateral Nonuniformity
Well Proximity Effect
Stress Effects
Statistical Variability
References
Problems
MOSFET Modeling for Circuit Simulation
Introduction
Types of Models
Models for Device Analysis and Design
Device Models for Circuit Simulation
Attributes of Good Compact Models
Model Formulation
Model Implementation in Circuit Simulators
Model Testing
Parameter Extraction
Simulation and Extraction for RF Applications
Common MOSFET Models Available in Circuit Simulators
BSIM
EKV
HiSIM2
PSP
References
Problems
Appendices
Basic Laws of Electrostatic in One Dimension
Quasi - Fermi Levels and Currents
General Analysis of the Two - Terminal MOS Structure
Careful Definitions for the Limits of Moderate Inversion
General Analysis of the Three - Terminal MOS Structure
Drain Current Formulation Using Quasi - Fermi Potentials
Modeling Based on Pinchoff Voltage and Related Topics
Evaluation of the Intrinsic Transient Source and Drain Current
Quantities Use in the Derivation of the Non-Quasi -Static Y-Parameter Model
Analysis of Buried Channel Devices
MOSFET Model Benchmark Tests

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