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Preface | |
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About the Author | |
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Electrons and Holes in Semiconductors | |
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Silicon Crystal Structure | |
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Bond Model of Electrons and Holes | |
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Energy Band Model | |
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Semiconductors, Insulators, and Conductors | |
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Electrons and Holes | |
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Density of States | |
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Thermal Equilibrium and the Fermi Function | |
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Electron and Hole Concentrations | |
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General Theory of n and p | |
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Carrier Concentrations at Extremely High and Low Temperatures | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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Motion and Recombination of Electrons and Holes | |
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Thermal Motion | |
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Drift | |
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Diffusion Current | |
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Relation Between the Energy Diagram and V, E | |
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Einstein Relationship Between D and � | |
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Electron-Hole Recombination | |
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Thermal Generation | |
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Quasi-Equilibrium and Quasi-Fermi Levels | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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Device Fabrication Technology | |
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Introduction to Device Fabrication | |
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Oxidation of Silicon | |
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Lithography | |
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Pattern Transfer-Etching | |
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Doping | |
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Dopant Diffusion | |
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Thin-Film Deposition | |
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Interconnect-The Back-End Process | |
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Testing, Assembly, and Qualification | |
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Chapter Summary-A Device Fabrication Example | |
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Problems | |
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References | |
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General References | |
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PN and Metal-Semiconductor Junctions | |
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PN Junction | |
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Building Blocks of the PN Junction Theory | |
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Depletion-Layer Model | |
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Reverse-Biased PN Junction | |
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Capacitance-Voltage Characteristics | |
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Junction Breakdown | |
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Carrier Injection Under Forward Bias-Quasi-Equilibrium Boundary Condition | |
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Current Continuity Equation | |
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Excess Carriers in Forward-Biased PN Junction | |
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PN Diode IV Characteristics | |
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Charge Storage | |
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Small-Signal Model of the Diode | |
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Application to Optoelectronic Devices | |
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Solar Cells | |
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Light-Emitting Diodes and Solid-State Lighting | |
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Diode Lasers | |
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Photodiodes | |
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Metal-Semiconductor Junction | |
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Schottky Barriers | |
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Thermionic Emission Theory | |
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Schottky Diodes | |
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Applications of Schottky Diodes | |
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Quantum Mechanical Tunneling | |
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Ohmic Contacts | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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Mos Capacitor | |
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Flat-Band Condition and Flat-Band Voltage | |
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Surface Accumulation | |
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Surface Depletion | |
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Threshold Condition and Threshold Voltage | |
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Strong Inversion Beyond Threshold | |
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MOS C-V Characteristics | |
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Oxide Charge-A Modification to V<sub>fb</sub> and V<sub>t</sub> | |
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Poly-Si Gate Depletion-Effective Increase in T<sub>ox</sub> | |
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Inversion and Accumulation Charge-Layer Thicknesses-Quantum Mechanical Effect | |
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CCD Imager and CMOS Imager | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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MOS Transistor | |
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Introduction to the MOSFET | |
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Complementary MOS (CMOS) Technology | |
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Surface Mobilities and High-Mobility FETs | |
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MOSFET V<sub>t</sub> Body Effect, and Steep Retrograde Doping | |
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Q<sub>INV</sub> in MOSFET | |
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Basic MOSFET IV Model | |
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CMOS Inverter-A Circuit Example | |
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Velocity Saturation | |
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MOSFET IV Model with Velocity Saturation | |
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Parasitic Source-Drain Resistance | |
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Extraction of the Series Resistance and the Effective Channel Length | |
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Velocity Overshoot and Source Velocity Limit | |
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Output Conductance | |
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High-Frequency Performance | |
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MOSFET Noises | |
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SRAM, DRAM, Nonvolatile (Flash) Memory Devices | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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MOSFETs in ICs-Scaling, Leakage, and Other Topics | |
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Technology Scaling-For Cost, Speed, and Power Consumption | |
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Subthreshold Current-"Off" Is Not Totally "Off" | |
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V<sub>t</sub> Roll-Off-Short-Channel MOSFETs Leak More | |
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Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage | |
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How to Reduce W<sub>dep</sub> | |
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Shallow Junction and Metal Source/Drain MOSFET | |
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Trade-Off Between I<sub>on</sub> and I<sub>off</sub> and Design for Manufacturing | |
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Ultra-Thin-Body SOI and Multigate MOSFETs | |
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Output Conductance | |
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Device and Process Simulation | |
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MOSFET Compact Model for Circuit Simulation | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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Bipolar Transistor | |
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Introduction to the BJT | |
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Collector Current | |
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Base Current | |
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Current Gain | |
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Base-Width Modulation by Collector Voltage | |
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Ebers-Moll Model | |
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Transit Time and Charge Storage | |
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Small-Signal Model | |
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Cutoff Frequency | |
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Charge Control Model | |
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Model for Large-Signal Circuit Simulation | |
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Chapter Summary | |
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Problems | |
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References | |
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General References | |
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Derivation of the Density of States | |
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Derivation of the Fermi-Dirac Distribution Function | |
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Self-Consistencies of Minority Carrier Assumptions | |
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Answers to Selected Problems | |
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Index | |