Modern Semiconductor Devices for Integrated Circuits

ISBN-10: 0136085253

ISBN-13: 9780136085256

Edition: 2010

Authors: Chenming C. Hu
List price: $105.99
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Description: Modern Semiconductor Devices for Integrated Circuits, First Editionintroduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications. MARKET: Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers.

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Book details

List price: $105.99
Copyright year: 2010
Publisher: Pearson Education, Limited
Publication date: 3/22/2009
Binding: Hardcover
Pages: 384
Size: 7.25" wide x 9.25" long x 0.75" tall
Weight: 1.782
Language: English

Chenming Calvin Hu holds the TSMC Distinguished Professor Chair of Microelectronics at University of California, Berkeley. He is a member of the US Academy of Engineering and a foreign member of the Chinese Academy of Sciences. From 2001 to 2004, he was the Chief Technology Officer of TSMC. A Fellow of the Institute of Electrical and Electronic Engineers (IEEE), he has been honored with the Jack Morton Award in1997 for his research on transistor reliability, the Solid State Circuits Award in 2002 for co-developing the first international standard transistor model for circuit simulation, and the Jun-ichi Nishizawa Medal in 2009 for exceptional contributions to device physics and scaling. He has supervised over 60 Ph.D. student theses, published 800 technical articles, and received more than 100 US patents. His other honors include Sigma Xi Moni Ferst Award, R&D 100 Award, and UC Berkeley's highest award for teaching the Berkeley Distinguished Teaching Award. For additional information, visit the author's Web site .

About the Author
Electrons and Holes in Semiconductors
Silicon Crystal Structure
Bond Model of Electrons and Holes
Energy Band Model
Semiconductors, Insulators, and Conductors
Electrons and Holes
Density of States
Thermal Equilibrium and the Fermi Function
Electron and Hole Concentrations
General Theory of n and p
Carrier Concentrations at Extremely High and Low Temperatures
Chapter Summary
General References
Motion and Recombination of Electrons and Holes
Thermal Motion
Diffusion Current
Relation Between the Energy Diagram and V, E
Einstein Relationship Between D and �
Electron-Hole Recombination
Thermal Generation
Quasi-Equilibrium and Quasi-Fermi Levels
Chapter Summary
General References
Device Fabrication Technology
Introduction to Device Fabrication
Oxidation of Silicon
Pattern Transfer-Etching
Dopant Diffusion
Thin-Film Deposition
Interconnect-The Back-End Process
Testing, Assembly, and Qualification
Chapter Summary-A Device Fabrication Example
General References
PN and Metal-Semiconductor Junctions
PN Junction
Building Blocks of the PN Junction Theory
Depletion-Layer Model
Reverse-Biased PN Junction
Capacitance-Voltage Characteristics
Junction Breakdown
Carrier Injection Under Forward Bias-Quasi-Equilibrium Boundary Condition
Current Continuity Equation
Excess Carriers in Forward-Biased PN Junction
PN Diode IV Characteristics
Charge Storage
Small-Signal Model of the Diode
Application to Optoelectronic Devices
Solar Cells
Light-Emitting Diodes and Solid-State Lighting
Diode Lasers
Metal-Semiconductor Junction
Schottky Barriers
Thermionic Emission Theory
Schottky Diodes
Applications of Schottky Diodes
Quantum Mechanical Tunneling
Ohmic Contacts
Chapter Summary
General References
Mos Capacitor
Flat-Band Condition and Flat-Band Voltage
Surface Accumulation
Surface Depletion
Threshold Condition and Threshold Voltage
Strong Inversion Beyond Threshold
MOS C-V Characteristics
Oxide Charge-A Modification to V<sub>fb</sub> and V<sub>t</sub>
Poly-Si Gate Depletion-Effective Increase in T<sub>ox</sub>
Inversion and Accumulation Charge-Layer Thicknesses-Quantum Mechanical Effect
CCD Imager and CMOS Imager
Chapter Summary
General References
MOS Transistor
Introduction to the MOSFET
Complementary MOS (CMOS) Technology
Surface Mobilities and High-Mobility FETs
MOSFET V<sub>t</sub> Body Effect, and Steep Retrograde Doping
Q<sub>INV</sub> in MOSFET
Basic MOSFET IV Model
CMOS Inverter-A Circuit Example
Velocity Saturation
MOSFET IV Model with Velocity Saturation
Parasitic Source-Drain Resistance
Extraction of the Series Resistance and the Effective Channel Length
Velocity Overshoot and Source Velocity Limit
Output Conductance
High-Frequency Performance
SRAM, DRAM, Nonvolatile (Flash) Memory Devices
Chapter Summary
General References
MOSFETs in ICs-Scaling, Leakage, and Other Topics
Technology Scaling-For Cost, Speed, and Power Consumption
Subthreshold Current-"Off" Is Not Totally "Off"
V<sub>t</sub> Roll-Off-Short-Channel MOSFETs Leak More
Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage
How to Reduce W<sub>dep</sub>
Shallow Junction and Metal Source/Drain MOSFET
Trade-Off Between I<sub>on</sub> and I<sub>off</sub> and Design for Manufacturing
Ultra-Thin-Body SOI and Multigate MOSFETs
Output Conductance
Device and Process Simulation
MOSFET Compact Model for Circuit Simulation
Chapter Summary
General References
Bipolar Transistor
Introduction to the BJT
Collector Current
Base Current
Current Gain
Base-Width Modulation by Collector Voltage
Ebers-Moll Model
Transit Time and Charge Storage
Small-Signal Model
Cutoff Frequency
Charge Control Model
Model for Large-Signal Circuit Simulation
Chapter Summary
General References
Derivation of the Density of States
Derivation of the Fermi-Dirac Distribution Function
Self-Consistencies of Minority Carrier Assumptions
Answers to Selected Problems
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