| |
| |
| Preface | |
| |
| |
| About the Author | |
| |
| |
| |
| Electrons and Holes in Semiconductors | |
| |
| |
| |
| Silicon Crystal Structure | |
| |
| |
| |
| Bond Model of Electrons and Holes | |
| |
| |
| |
| Energy Band Model | |
| |
| |
| |
| Semiconductors, Insulators, and Conductors | |
| |
| |
| |
| Electrons and Holes | |
| |
| |
| |
| Density of States | |
| |
| |
| |
| Thermal Equilibrium and the Fermi Function | |
| |
| |
| |
| Electron and Hole Concentrations | |
| |
| |
| |
| General Theory of n and p | |
| |
| |
| |
| Carrier Concentrations at Extremely High and Low Temperatures | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| Motion and Recombination of Electrons and Holes | |
| |
| |
| |
| Thermal Motion | |
| |
| |
| |
| Drift | |
| |
| |
| |
| Diffusion Current | |
| |
| |
| |
| Relation Between the Energy Diagram and V, E | |
| |
| |
| |
| Einstein Relationship Between D and � | |
| |
| |
| |
| Electron-Hole Recombination | |
| |
| |
| |
| Thermal Generation | |
| |
| |
| |
| Quasi-Equilibrium and Quasi-Fermi Levels | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| Device Fabrication Technology | |
| |
| |
| |
| Introduction to Device Fabrication | |
| |
| |
| |
| Oxidation of Silicon | |
| |
| |
| |
| Lithography | |
| |
| |
| |
| Pattern Transfer-Etching | |
| |
| |
| |
| Doping | |
| |
| |
| |
| Dopant Diffusion | |
| |
| |
| |
| Thin-Film Deposition | |
| |
| |
| |
| Interconnect-The Back-End Process | |
| |
| |
| |
| Testing, Assembly, and Qualification | |
| |
| |
| |
| Chapter Summary-A Device Fabrication Example | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| PN and Metal-Semiconductor Junctions | |
| |
| |
| |
| PN Junction | |
| |
| |
| |
| Building Blocks of the PN Junction Theory | |
| |
| |
| |
| Depletion-Layer Model | |
| |
| |
| |
| Reverse-Biased PN Junction | |
| |
| |
| |
| Capacitance-Voltage Characteristics | |
| |
| |
| |
| Junction Breakdown | |
| |
| |
| |
| Carrier Injection Under Forward Bias-Quasi-Equilibrium Boundary Condition | |
| |
| |
| |
| Current Continuity Equation | |
| |
| |
| |
| Excess Carriers in Forward-Biased PN Junction | |
| |
| |
| |
| PN Diode IV Characteristics | |
| |
| |
| |
| Charge Storage | |
| |
| |
| |
| Small-Signal Model of the Diode | |
| |
| |
| |
| Application to Optoelectronic Devices | |
| |
| |
| |
| Solar Cells | |
| |
| |
| |
| Light-Emitting Diodes and Solid-State Lighting | |
| |
| |
| |
| Diode Lasers | |
| |
| |
| |
| Photodiodes | |
| |
| |
| |
| Metal-Semiconductor Junction | |
| |
| |
| |
| Schottky Barriers | |
| |
| |
| |
| Thermionic Emission Theory | |
| |
| |
| |
| Schottky Diodes | |
| |
| |
| |
| Applications of Schottky Diodes | |
| |
| |
| |
| Quantum Mechanical Tunneling | |
| |
| |
| |
| Ohmic Contacts | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| Mos Capacitor | |
| |
| |
| |
| Flat-Band Condition and Flat-Band Voltage | |
| |
| |
| |
| Surface Accumulation | |
| |
| |
| |
| Surface Depletion | |
| |
| |
| |
| Threshold Condition and Threshold Voltage | |
| |
| |
| |
| Strong Inversion Beyond Threshold | |
| |
| |
| |
| MOS C-V Characteristics | |
| |
| |
| |
| Oxide Charge-A Modification to V<sub>fb</sub> and V<sub>t</sub> | |
| |
| |
| |
| Poly-Si Gate Depletion-Effective Increase in T<sub>ox</sub> | |
| |
| |
| |
| Inversion and Accumulation Charge-Layer Thicknesses-Quantum Mechanical Effect | |
| |
| |
| |
| CCD Imager and CMOS Imager | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| MOS Transistor | |
| |
| |
| |
| Introduction to the MOSFET | |
| |
| |
| |
| Complementary MOS (CMOS) Technology | |
| |
| |
| |
| Surface Mobilities and High-Mobility FETs | |
| |
| |
| |
| MOSFET V<sub>t</sub> Body Effect, and Steep Retrograde Doping | |
| |
| |
| |
| Q<sub>INV</sub> in MOSFET | |
| |
| |
| |
| Basic MOSFET IV Model | |
| |
| |
| |
| CMOS Inverter-A Circuit Example | |
| |
| |
| |
| Velocity Saturation | |
| |
| |
| |
| MOSFET IV Model with Velocity Saturation | |
| |
| |
| |
| Parasitic Source-Drain Resistance | |
| |
| |
| |
| Extraction of the Series Resistance and the Effective Channel Length | |
| |
| |
| |
| Velocity Overshoot and Source Velocity Limit | |
| |
| |
| |
| Output Conductance | |
| |
| |
| |
| High-Frequency Performance | |
| |
| |
| |
| MOSFET Noises | |
| |
| |
| |
| SRAM, DRAM, Nonvolatile (Flash) Memory Devices | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| MOSFETs in ICs-Scaling, Leakage, and Other Topics | |
| |
| |
| |
| Technology Scaling-For Cost, Speed, and Power Consumption | |
| |
| |
| |
| Subthreshold Current-"Off" Is Not Totally "Off" | |
| |
| |
| |
| V<sub>t</sub> Roll-Off-Short-Channel MOSFETs Leak More | |
| |
| |
| |
| Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage | |
| |
| |
| |
| How to Reduce W<sub>dep</sub> | |
| |
| |
| |
| Shallow Junction and Metal Source/Drain MOSFET | |
| |
| |
| |
| Trade-Off Between I<sub>on</sub> and I<sub>off</sub> and Design for Manufacturing | |
| |
| |
| |
| Ultra-Thin-Body SOI and Multigate MOSFETs | |
| |
| |
| |
| Output Conductance | |
| |
| |
| |
| Device and Process Simulation | |
| |
| |
| |
| MOSFET Compact Model for Circuit Simulation | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| Bipolar Transistor | |
| |
| |
| |
| Introduction to the BJT | |
| |
| |
| |
| Collector Current | |
| |
| |
| |
| Base Current | |
| |
| |
| |
| Current Gain | |
| |
| |
| |
| Base-Width Modulation by Collector Voltage | |
| |
| |
| |
| Ebers-Moll Model | |
| |
| |
| |
| Transit Time and Charge Storage | |
| |
| |
| |
| Small-Signal Model | |
| |
| |
| |
| Cutoff Frequency | |
| |
| |
| |
| Charge Control Model | |
| |
| |
| |
| Model for Large-Signal Circuit Simulation | |
| |
| |
| |
| Chapter Summary | |
| |
| |
| Problems | |
| |
| |
| References | |
| |
| |
| General References | |
| |
| |
| |
| Derivation of the Density of States | |
| |
| |
| |
| Derivation of the Fermi-Dirac Distribution Function | |
| |
| |
| |
| Self-Consistencies of Minority Carrier Assumptions | |
| |
| |
| Answers to Selected Problems | |
| |
| |
| Index | |