Solid State Electronic Devices

ISBN-10: 013149726X
ISBN-13: 9780131497269
Edition: 6th 2006 (Revised)
List price: $221.80 Buy it from $6.66 Rent it from $121.02
This item qualifies for FREE shipping

*A minimum purchase of $35 is required. Shipping is provided via FedEx SmartPost® and FedEx Express Saver®. Average delivery time is 1 – 5 business days, but is not guaranteed in that timeframe. Also allow 1 - 2 days for processing. Free shipping is eligible only in the continental United States and excludes Hawaii, Alaska and Puerto Rico. FedEx service marks used by permission."Marketplace" orders are not eligible for free or discounted shipping.

30 day, 100% satisfaction guarantee

If an item you ordered from TextbookRush does not meet your expectations due to an error on our part, simply fill out a return request and then return it by mail within 30 days of ordering it for a full refund of item cost.

Learn more about our returns policy

Used Starting from $6.66
Rent Starting from $121.02
what's this?
Rush Rewards U
Members Receive:
coins
coins
You have reached 400 XP and carrot coins. That is the daily max!
You could win $10,000

Get an entry for every item you buy, rent, or sell.

Study Briefs

Limited time offer: Get the first one free! (?)

All the information you need in one place! Each Study Brief is a summary of one specific subject; facts, figures, and explanations to help you learn faster.

Add to cart
Study Briefs
History of Western Art Online content $4.95 $1.99
Add to cart
Study Briefs
History of World Philosophies Online content $4.95 $1.99
Add to cart
Study Briefs
American History Volume 1 Online content $4.95 $1.99

Customers also bought

Loading
Loading
Loading
Loading
Loading
Loading
Loading
Loading
Loading
Loading

Book details

List price: $221.80
Edition: 6th
Copyright year: 2006
Publisher: Prentice Hall PTR
Publication date: 7/26/2005
Binding: Hardcover
Pages: 608
Size: 7.25" wide x 9.25" long x 1.25" tall
Weight: 2.728
Language: English

Crystal Properties and Growth of Semiconductors
Semiconductor Materials
Periodic Structures
Crystal Lattices
Cubic Lattices
Planes and Directions
The Diamond Lattice
Bulk Crystal Growth
Starting Materials
Growth of Single Crystal Ingots
Wafers
Doping
Epitaxial Growth
Lattice Matching in Epitaxial Growth
Vapor-Phase Epitaxy
Molecular Beam Epitaxy
Atoms and Electrons
Introduction to Physical Models
Experimental Observations
The Photoelectric Effect
Atomic Spectra
The Bohr Model
Quantum Mechanics
Probability and the Uncertainty Principle
The Schrdinger Wave Equation
Potential Well Problem
Tunneling
Atomic Structure and the Periodic Table
The Hydrogen Atom
The Periodic Table
Energy Bands and Charge Carriers in Semiconductors
Bonding Forces and Energy Bands in Solids
Bonding Forces in Solids
Energy Bands
Metals, Semiconductors, and Insulators
Direct and Indirect Semiconductors
Variation of Energy Bands with Alloy Composition
Charge Carriers in Semiconductors
Electrons and Holes
Effective Mass
Intrinsic Material
Extrinsic Material
Electrons and Holes in Quantum Wells
Carrier Concentrations
The Fermi Level
Electron and Hole Concentrations at Equilibrium
Temperature Dependence of Carrier Concentrations
Compensation and Space Charge Neutrality
Drift of Carriers in Electric and Magnetic Fields
Conductivity and Mobility
Drift and Resistance
Effects of Temperature and Doping on Mobility
High-Field Effects
The Hall Effect
Invariance of the Fermi Level at Equilibrium
Excess Carriers in Semiconductors
Optical Absorption
Luminescence
Photoluminescence
Electroluminescence
Carrier Lifetime and Photoconductivity
Direct Recombination of Electrons and Holes
Indirect Recombination
Trapping
Steady State Carrier Generation
Quasi-Fermi Levels
Photoconductive Devices
Diffusion of Carriers
Diffusion Processes
Diffusion and Drift of Carriers
Built-in Fields
Diffusion and Recombination
The Continuity Equation
Steady State Carrier Injection
Diffusion Length
The Haynes-Shockley Experiment
Gradients in the Quasi-Fermi Levels
Junctions
Fabrication of p-n Junctions
Thermal Oxidation
Diffusion
Rapid Thermal Processing
Ion Implantation
Chemical Vapor Deposition (CVD)
Photolithography
Etching
Metallization
Equilibrium Conditions
The Contact Potential
Equilibrium Fermi Levels
Space Charge at a Junction
Forward- and Reverse-Biased Junctions
Steady State Conditions
Qualitative Description of Current Flow at a Junction
Carrier Injection
Reverse Bias
Reverse-Bias Breakdown
Zener Breakdown
Avalanche Breakdown
Rectifiers
The Breakdown Diode
Transient and A-C Conditions
Time Variation of Stored Charge
Reverse Recovery Transient
Switching Diodes
Capacitance of p-n Junctions
The Varactor Diode
Deviations from the Simple Theory
Effects of Contact Potential on Carrier Injection
Recombination and Generation in the Transition Region
Ohmic Losses
Graded Junctions
Metal-Semiconductor Junctions
Schottky Barriers
Rectifying Contacts
Ohmic Contacts
Typical Schottky Barriers
Heterojunctions

×
Free shipping on orders over $35*

*A minimum purchase of $35 is required. Shipping is provided via FedEx SmartPost® and FedEx Express Saver®. Average delivery time is 1 – 5 business days, but is not guaranteed in that timeframe. Also allow 1 - 2 days for processing. Free shipping is eligible only in the continental United States and excludes Hawaii, Alaska and Puerto Rico. FedEx service marks used by permission."Marketplace" orders are not eligible for free or discounted shipping.

Learn more about the TextbookRush Marketplace.

×