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Crystal Properties and Growth of Semiconductors | |
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Semiconductor Materials | |
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Periodic Structures | |
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Crystal Lattices | |
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Cubic Lattices | |
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Planes and Directions | |
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The Diamond Lattice | |
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Bulk Crystal Growth | |
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Starting Materials | |
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Growth of Single Crystal Ingots | |
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Wafers | |
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Doping | |
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Epitaxial Growth | |
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Lattice Matching in Epitaxial Growth | |
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Vapor-Phase Epitaxy | |
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Molecular Beam Epitaxy | |
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Atoms and Electrons | |
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Introduction to Physical Models | |
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Experimental Observations | |
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The Photoelectric Effect | |
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Atomic Spectra | |
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The Bohr Model | |
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Quantum Mechanics | |
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Probability and the Uncertainty Principle | |
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The Schrdinger Wave Equation | |
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Potential Well Problem | |
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Tunneling | |
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Atomic Structure and the Periodic Table | |
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The Hydrogen Atom | |
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The Periodic Table | |
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Energy Bands and Charge Carriers in Semiconductors | |
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Bonding Forces and Energy Bands in Solids | |
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Bonding Forces in Solids | |
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Energy Bands | |
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Metals, Semiconductors, and Insulators | |
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Direct and Indirect Semiconductors | |
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Variation of Energy Bands with Alloy Composition | |
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Charge Carriers in Semiconductors | |
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Electrons and Holes | |
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Effective Mass | |
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Intrinsic Material | |
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Extrinsic Material | |
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Electrons and Holes in Quantum Wells | |
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Carrier Concentrations | |
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The Fermi Level | |
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Electron and Hole Concentrations at Equilibrium | |
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Temperature Dependence of Carrier Concentrations | |
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Compensation and Space Charge Neutrality | |
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Drift of Carriers in Electric and Magnetic Fields | |
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Conductivity and Mobility | |
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Drift and Resistance | |
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Effects of Temperature and Doping on Mobility | |
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High-Field Effects | |
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The Hall Effect | |
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Invariance of the Fermi Level at Equilibrium | |
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Excess Carriers in Semiconductors | |
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Optical Absorption | |
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Luminescence | |
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Photoluminescence | |
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Electroluminescence | |
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Carrier Lifetime and Photoconductivity | |
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Direct Recombination of Electrons and Holes | |
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Indirect Recombination | |
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Trapping | |
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Steady State Carrier Generation | |
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Quasi-Fermi Levels | |
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Photoconductive Devices | |
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Diffusion of Carriers | |
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Diffusion Processes | |
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Diffusion and Drift of Carriers | |
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Built-in Fields | |
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Diffusion and Recombination | |
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The Continuity Equation | |
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Steady State Carrier Injection | |
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Diffusion Length | |
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The Haynes-Shockley Experiment | |
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Gradients in the Quasi-Fermi Levels | |
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Junctions | |
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Fabrication of p-n Junctions | |
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Thermal Oxidation | |
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Diffusion | |
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Rapid Thermal Processing | |
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Ion Implantation | |
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Chemical Vapor Deposition (CVD) | |
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Photolithography | |
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Etching | |
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Metallization | |
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Equilibrium Conditions | |
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The Contact Potential | |
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Equilibrium Fermi Levels | |
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Space Charge at a Junction | |
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Forward- and Reverse-Biased Junctions | |
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Steady State Conditions | |
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Qualitative Description of Current Flow at a Junction | |
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Carrier Injection | |
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Reverse Bias | |
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Reverse-Bias Breakdown | |
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Zener Breakdown | |
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Avalanche Breakdown | |
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Rectifiers | |
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The Breakdown Diode | |
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Transient and A-C Conditions | |
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Time Variation of Stored Charge | |
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Reverse Recovery Transient | |
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Switching Diodes | |
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Capacitance of p-n Junctions | |
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The Varactor Diode | |
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Deviations from the Simple Theory | |
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Effects of Contact Potential on Carrier Injection | |
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Recombination and Generation in the Transition Region | |
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Ohmic Losses | |
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Graded Junctions | |
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Metal-Semiconductor Junctions | |
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Schottky Barriers | |
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Rectifying Contacts | |
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Ohmic Contacts | |
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Typical Schottky Barriers | |
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Heterojunctions | |