Hydrogen in Semiconductors II

Name: Hydrogen in Semiconductors II
Price: 270.31 USD
Availability: InStock
ISBN: 9780127521701

ISBN-10: 0127521704

ISBN-13: 9780127521701

Edition: 1999

Authors: Norbert H. Nickel, Eicke R. Weber, Robert K. Willardson

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Description:

Reflecting the interdisciplinary nature of the field that it covers, Semiconductors and Semimetals is a well-established series of texts for researchers and practitioners in materials science and electrical engineering.

Book details

List price: $260.00
Copyright year: 1999
Publisher: Elsevier Science & Technology Books
Publication date: 4/28/1999
Binding: Hardcover
Pages: 526
Size: 6.25" wide x 9.25" long x 1.00" tall
Weight: 1.936
Language: English



Preface


List of Contributors



Introduction to Hydrogen in Semiconductors II




Isolated Monatomic Hydrogen in Silicon




Introduction



Theory



Hydrogen in the Positive Charge State: H[superscript +]



Hydrogen in the Neutral Charge State: H[superscript 0]



Hydrogen in the Negative Charge State: H[superscript -]



Relative Stability of Different Charge States and Negative-U Character



Experiment



Donor Level



Acceptor Level



Equilibrium Densities



Conclusions



Electron Paramagnetic Resonance Studies of Hydrogen and Hydrogen-Related Defects in Crystalline Silicon




Introduction



Interstitial (BC) Hydrogen in Silicon



Experimental Procedure



EPR Spectrum of Bond-Centered Hydrogen



Stress-Induced Alignment of Bond-Centered Hydrogen



Thermally Activated Annealing



EPR of Hydrogen-Related Complexes in Silicon



Hydrogen-Intrinsic Defect Complexes



EPR of Platinum-Hydrogen and Sulphur-Hydrogen Complexes



ENDOR Spectra of Si--H Bonds at the (111) Si Surface



ENDOR of Hydrogen in the Oxygen Thermal Donor (NL10)



Hydrogen-Induced Effects in Silicon



Hydrogen-Associated Shallow Donors in Hydrogen-Implanted Silicon



Stress-Induced Alignment of the AA1 Spectrum



Neutral Charge State of Hydrogen-Associated Donor



EPR Evidence of Hydrogen-Enhanced Diffusion of Al in Silicon



Summary and Conclusions



Hydrogen in Polycrystalline Silicon




Introduction



Experimental Techniques



Sample Preparation and Characterization



Hydrogen Passivation



Characterization



Hydrogen Diffusion



Hydrogen Diffusion from a Plasma Source



Hydrogen Diffusion from a Silicon Layer



Hydrogen Density of States



Hydrogen Passivation of Grain-Boundary Defects



Metastability



Light-Induced Defect Generation



Metastable Changes in the Electrical Conductivity



Hydrogen-Induced Defects During Plasma Exposure



Generation of Acceptor-Like Defects



Platelets



Summary and Future Directions



Hydrogen Phenomena in Hydrogenated Amorphous Silicon




Introduction



Material Characterization by Hydrogen Effusion and Infrared Absorption



Measurement Techniques and Material Preparation



Hydrogen Effusion Data



Infrared Absorption Data



Experimental Hydrogen Diffusion and Solubility Data



Hydrogen Diffusion Data



Hydrogen Solubility Data



Hydrogen Diffusion and Effusion Effects



Hydrogen Diffusion Processes



Hydrogen Density of States Distribution and Hydrogen Chemical Potential



Temperature Shift of Hydrogen Chemical Potential and Meyer-Neldel Rule of Hydrogen Diffusion



Time Dependence of Hydrogen Diffusion Coefficient



Deviations from Error-Function Diffusion Profiles



Plasma In-Diffusion Versus Layer Diffusion



Relation Between SIMS Diffusion Data and Hydrogen Effusion Data



Interrelation Between IR Absorption Spectra and Effusion Transients



Hydrogen Solubility Effects



Solubility in Compact Material



Hydrogen-Related Void Formation



Conclusions



Hydrogen Interactions with Polycrystalline and Amorphous Silicon--Theory




Introduction



Role of Hydrogen in Amorphous and Polycrystalline Silicon



General Features of Hydrogen in Silicon



Computational Approaches



Hydrogen Interactions With Amorphous Silicon



Hydrogen Motion - Introduction



Hydrogen Interactions with Dangling Bonds



Hydrogen Interactions with Overcoordination Defects



Hydrogen Interactions with Weak Si--Si Bonds



Simulations of Amorphous Networks



Hydrogen Diffusion and Metastability - Discussion



Hydrogen Versus Deuterium for Passivation of Dangling Bonds



Hydrogen in Polycrystalline Silicon



Grain Boundaries



Hydrogen Interactions with Grain Boundaries



Hydrogen-Induced Generation of Donor-Like Metastable Defects



Hydrogen-Induced Generation of Acceptor-Like Defects



Conclusions and Future Directions



Hydrogen in Polycrystalline CVD Diamond




Introduction



Solid-State Characterization Techniques



Fourier Transform Spectroscopy



Nuclear Magnetic Resonance



Electron Paramagnetic Resonance



Other Analysis Techniques



Results of Solid-State Analysis



Covalent Bonding Environments



Quantitative Hydrogen Concentrations



Local Hydrogen Distribution



Proximity to Paramagnetic Defects



Macroscopic Hydrogen Distributions



Effects of Hydrogen on Observed Properties



Infrared Transmission



Thermal Conductivity



Summary



Dynamics of Muonium Diffusion, Site Changes and Charge-State Transitions




Introduction



Experimental Techniques



Transverse-Field Methods



Longitudinal-Field Methods



Identification and Characterization of Muonium States



Neutral Paramagnetic Centers



Charged Diamagnetic Centers



Dynamics of Muonium Transitions



Silicon: The Basic Model



Germanium



Gallium Arsenide



Other III-V Materials



Relevance to Hydrogen Impurities



Hydrogen in III-V and II-VI Semiconductors




Introduction



Hydrogen in III-V Semiconductors



Hydrogen in GaAs



Hydrogen in AlAs



Hydrogen in InP



Hydrogen in GaP



Hydrogen in AlSb



Hydrogen in GaN



Hydrogen in Other III-V Semiconductors



Hydrogen in II-VI Semiconductors



Hydrogen in ZnSe



Hydrogen in CdTe



Summary and Future Discussion



The Properties of Hydrogen in GaN and Related Alloys




Introduction



Hydrogen in As-Grown Nitrides



Doped Material



Sources of Hydrogen



Diffusion



Dopant Passivation



Calcium



Carbon



Summary



Diffusion and Reactivation Mechanism



Alloys



In-Containing Nitrides



Mechanisms



Heterostructures



Role of Hydrogen During Processing



Implant Isolation



Wet Processing



Deposition and Etching



Theory of Hydrogen in Nitrides



Summary and Conclusions



Theory of Hydrogen in GaN




Introduction



Method



Defect Concentrations and Solubility



Energetics, Atomic Geometries, and Electronic Structure



Monatomic Hydrogen in GaN



Atomic Geometries and Stable Positions



Migration Path and Diffusion Barriers



Formation Energies and Negative-U Effect



Hydrogen Molecules in GaN



Hydrogen-Acceptor Complexes in GaN



The Mg-H Complex



Other H-Acceptor Complexes



Complexes of H With Native Defects



Hydrogen Interacting with Nitrogen Vacancies



Hydrogen Interacting with Gallium Vacancies



Role of Hydrogen in Doping GaN



Doping in the Absence of Hydrogen



Doping in the Presence of Hydrogen



Activation Mechanism of the Dopants



General Criteria for Hydrogen to Enhance Doping



Conclusions and Outlook


Index


Contents of Volumes in This Series