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Preface | |
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About the Editor | |
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Contributors | |
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Semiconductor Photoconductors for Visible to Far-Infrared Detection | |
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Introduction | |
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Mechanisms of Photon Absorption | |
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Interaction with High-Energy Radiation | |
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Intrinsic Absorption | |
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Extrinsic Absorption Mechanisms | |
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Absorption in Quantum Wells and Superlattices | |
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Intrinsic Photoconductors | |
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Figures of Merit | |
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Conventional Intrinsic Photoconductors | |
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Photoconductors for Ultrafast Optoelectronics | |
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Alternate Modes of Operation and Device Design | |
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Extrinsic Photoconductors | |
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Operation of Extrinsic Photoconductors | |
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Figures of Merit | |
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Device Construction | |
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Extending the Wavelength Response | |
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Transient Behavior of Extrinsic Photoconductors | |
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Blocked Impurity Band Detectors and the Solid-State Photomultiplier | |
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Solid-State Photomultiplier | |
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Quantum-Well Infrared Photodetectors | |
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Conclusion | |
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Acknowledgments | |
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References | |
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Resonant Cavity Enhanced Photodetectors | |
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Introduction | |
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Historical Perspective--Prior to the 1990s | |
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Organization of the Chapter | |
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Theoretical Formulation of Resonant Cavity Enhanced Photodetector Parameters | |
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Analytical Formulation of the Quantum Efficiency for Resonant Cavity Enhanced Photodetectors | |
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Standing Wave Effect | |
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Resonant Cavity Enhancement of Quantum Efficiency | |
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Wavelength Selectivity of Resonant Cavity Enhanced Photodetection | |
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Angle Dependence of Quantum Efficiency | |
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Nearly Unity Quantum Efficiency Photodetection | |
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Limitations of Analytical Formulation | |
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Numerical Calculation of Optical Response | |
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Recursive Formulation | |
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Scattering Matrix Method | |
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High-Speed Properties of Resonant Cavity Enhanced Photodiodes | |
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Theoretical Considerations | |
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High-Speed Capabilities of Resonant Cavity Enhanced Photodetectors | |
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External Circuitry and Packaging | |
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Transient Simulation of Resonant Cavity Enhanced Photodiodes | |
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Design Criteria for Resonant Cavity Enhanced Photodetectors | |
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Evaluation of Various Resonant Cavity Enhanced Designs | |
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Material Requirements for Resonant Cavity Enhanced Photodetection | |
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Material System Combinations for Resonant Cavity Enhanced Photodetection | |
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Review of Experimental Results | |
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Characterization of Quantum Efficiency and Electrical Performance | |
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Classification of Resonant Cavity Enhanced Photodetector Categories | |
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Resonant Cavity Enhanced Photodetectors with High/Unity Efficiency | |
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Resonant Cavity Enhanced Photodetectors for Optical Communications | |
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Wavelength Selective Resonant Cavity Enhanced Photodetectors | |
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Polarization Sensing with Resonant Cavity Enhanced Photodetectors | |
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Resonant Cavity Enhanced Photodiodes Integrated with Light Emitters | |
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Advanced Designs--Flat Spectral Response | |
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Conclusions | |
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Acknowledgments | |
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References | |
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Silicon and GaAs as Far-Infrared Detector Material | |
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Introduction | |
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Silicon Far-Infrared Detectors | |
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GaAs Far-Infrared Detectors | |
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Far-Infrared Absorption | |
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Far-Infrared Absorption in GaAs | |
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Far-Infrared Absorption in Silicon | |
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Homojunction Interfacial Workfunction Internal Photoemission Detectors | |
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Type-I Homojunction Interfacial Workfunction Internal Photoemission Detectors: N[subscript a] [ N[subscript c] (E[subscript F] ] E[superscript n]+[subscript c]) | |
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Type-II Homojunction Interfacial Workfunction Internal Photoemission Detector: N[subscript c] [ N[subscript a] [ N[subscript 0] (E[superscript p]+[subscript v] ] E[subscript F] ] E[superscript i subscript v]) | |
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Performance Improvements in Homojunction Interfacial Workfunction Internal Photoemission Detectors | |
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Type-II Silicon Homojunction Interfacial Workfunction Internal Photoemission Detector | |
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Type-III Homojunction Internal Photoemission Detector: N[subscript a] ] N[subscript 0] (E[subscript F] [ E[superscript i subscript v]) | |
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Summary | |
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Acknowledgment | |
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References | |
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Bulk Semiconductors for Infrared Applications | |
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Overview | |
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Material Preparation and Basic Characterization | |
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Materials for Infrared Detection | |
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Transition Metal-Doped II-VI Compounds for Tunable Midinfrared Lasers | |
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Electro-optic and Nonlinear Optic Materials | |
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Material Properties Relevant for Infrared Devices | |
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Photorefractives | |
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Optical Limiters | |
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Solid-State Midinfrared Tunable Lasers | |
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Optical Parametric Oscillators (OPO) | |
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Infrared Optical Components | |
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Conclusions | |
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References | |
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Photodetectors for Optical Fiber Communications | |
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Introduction | |
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Basic Principles | |
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p-i-n Photodetectors | |
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Introduction | |
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Vertically Illuminated p-i-n Photodiode Structure | |
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Edge-Illuminated Waveguide Photodiodes | |
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Resonance Cavity-Enhanced Photodiodes | |
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Effect of Packaging | |
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Reliability | |
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Schottky Barrier Photodetectors | |
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Metal-Semiconductor-Metal Photodetectors | |
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Introduction | |
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Metal-Semiconductor-Metal Photodiode Structure and Performance | |
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Avalanche Photodiodes | |
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Introduction | |
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Separate Absorption Grading Charge Sheet and Multiplication APDs | |
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Superlattice APD | |
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Resonant Cavity Encapsulated APD | |
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Si-Based Photodetectors | |
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InGaAs on Si-Based Photodetectors | |
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Ge[subscript 1-x]C[subscript x]/Si-Based Photodetectors | |
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Optical Receiver | |
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Introduction | |
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Hybrid Photoreceiver | |
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Monolithic Photoreceiver | |
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Summary | |
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Acknowledgments | |
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References | |
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Germanium Dioxide-Based Glasses as Advanced Optical Sensors Materials | |
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Introduction | |
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Properties and Structure of Glass-Forming GeO[subscript 2] | |
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X-Ray and Neutron Scattering Studies of GeO[subscript 2] | |
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Infrared Spectroscopy Studies | |
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Electron Paramagnetic Resonance Studies | |
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Optical Properties | |
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Properties and Structure of Binary Germanate Glasses | |
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Properties and Structure of Ternary Germanate Glasses | |
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Pseudoternary Fluoride-Containing Germanate Systems | |
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Germanium Dioxide Based Glasses in Applications | |
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References | |
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High-Bandwidth Optical Networks and Communication | |
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Introduction | |
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Networks | |
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Local Area Networks | |
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Metropolitan Area and Wide Area Networks | |
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Internet Protocol | |
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Network Layers | |
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Enabling Technologies and Transmission Systems | |
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Optical Amplifiers | |
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Transmission Systems Design | |
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Computer Aided Design | |
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Transmission | |
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Linear Propagation | |
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Single-Mode Dispersion and Dispersion Penalties | |
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Nonlinear Propagation and the Nonlinear Schrodinger Equation | |
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Wavelength-Division Multiplexing | |
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Solitons | |
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Soliton Optical Communications | |
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Solitons and Polarization | |
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Solitons and Amplification | |
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Gordon-Haus Jitter and Timing Jitter Control | |
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Dispersion Management and Dispersion-Managed Solitons | |
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Wavelength-Division Multiplexing and Solitons | |
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Systems Experiments | |
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Femtosecond Propagation | |
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Switching | |
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Switches in Communications | |
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Soliton All-Optical Switching | |
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Coupled Higher-Order Equations | |
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All-Optical Networks | |
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Multihop Networks | |
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Wavelength Routing Networks | |
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Node Design | |
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Crosstalk | |
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Traffic Patterns and Demands | |
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Routing and Wavelength Assignment | |
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Free-Space Optical Propagation | |
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Self-Focusing | |
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Gigabit/sec Propagation | |
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Terabit/sec Propagation | |
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Summary | |
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Acknowledgments | |
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References | |
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Index | |