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Molecular Beam Epitaxy From Research to Mass Production

ISBN-10: 012387839X
ISBN-13: 9780123878397
Edition: 2013
Authors: Mohamed Henini
List price: $229.95
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Description: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in  More...

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Book details

List price: $229.95
Copyright year: 2013
Publisher: Elsevier Science & Technology Books
Publication date: 11/20/2012
Binding: Hardcover
Pages: 744
Size: 9.00" wide x 11.00" long x 1.25" tall
Weight: 4.180
Language: English

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.Condenses fundamental science of MBE into a modern reference, speeding up literature reviewDiscusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and researchCoverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community

Dr M. Henini has over 20 years' experience of Molecular Beam Epitaxy (MBE) growth and has published 700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Molecular Beam Epitaxy: Fundamentals, Historical Background and Future Prospects
Molecular Beam Epitaxy in the Ultra-Vacuum of Space: Present and Near Future
Growth of Semiconductor Nanowires by Molecular Beam Epitaxy
Droplet Epitaxy of Nanostructures
Self-assembled Quantum Dots
Migration Enhanced Epitaxy of Low Dimensional Structures
Surfactant-modified Epitaxy
MBE Growth of High Mobility 2DEG
MBE of GaAsBi
Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys
MBE of Dilute Nitride Optoelectronic Devices
The Effects of Antimony During MBE Growth
Nonpolar Cubic III Nitrides: From the Basics of Growth to Device Applications
In-rich InGaN
Molecular Beam Epitaxy of IV-VI Compounds: Heterostructures/Superlattices/Devices
Epitaxial Growth f Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors
MBE of Semiconducting Oxides
ZnO Materials and Devices grown by MBE
MBE of Complex Oxides
Epitaxial Systems Combining Oxides and Semiconductors
MBE Growth of As and Sb based Ferromagnetic III-V Semiconductor
Epitaxial Magnetic Layers Grown by MBE : Model Systems to Study the Physics in Nanomagnetism and Spintronic
Atomic Layer-by-Layer Molecular Beam Epitaxy of Superconducting and Magnetic Materials
MBE of Semimagnetic Quantum Dots
MBE Growth of Graphene
Growth and Characterization of Fullerene/GaAs Interfaces and C60 Doped GaAs and AlGaAs layers
Molecular Beam Epitaxial Growth and Exotic Electronic Structure of Topological Insulators
Thin Films of Organic Molecules: Interfaces and Epitaxial Growth
MBE of II-VI Lasers
MBE Growth of Terahertz Quantum Cascade Lasers
MBE as a Mass Production Technique
Mass production of optoelectronic devices: LEDs, lasers, VCSELs
Mass Production of Sensors Grown by MBE

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