Operation and Modeling of the MOS Transistor

ISBN-10: 0070655235

ISBN-13: 9780070655232

Edition: 2nd 1999

Authors: Yannis Tsividis

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Book details

Edition: 2nd
Copyright year: 1999
Publisher: McGraw-Hill Higher Education
Binding: Hardcover
Pages: 648
Size: 7.75" wide x 9.75" long x 1.50" tall
Weight: 2.486
Language: English

Semiconductors, Junctions, and MOSFET Overviewp. 1
The Two-Terminal MOS Structurep. 50
The Three-Terminal MOS Structurep. 91
The Four-Terminal MOS Transistorp. 125
MOS Transistors with Ion-Implanted Channelsp. 207
Small-Dimension Effectsp. 248
The MOS Transistor in Dynamic Operation - Large-Signal Modelingp. 312
Small-Signal Modeling for Low and Medium Frequenciesp. 359
High-Frequency Small-Signal Modelsp. 440
MOSFET Modeling for Circuit Simulationp. 513
Energy Bands and Related Conceptsp. 557
Basic Laws of Electrostatics in One Dimensionp. 566
Charge Density, Electric Field, and Potential in the pn Junctionp. 572
Energy Band Diagrams for the Two-Terminal MOS Structurep. 574
Charge Density, Electric Field, and Potential in the Two-Terminal MOS Structurep. 578
General Analysis of the Two-Terminal MOS Structurep. 580
Careful Definitions for the Limits of Moderate Inversionp. 584
Energy Band Diagrams for the Three-Terminal MOS Structurep. 587
General Analysis of the Three-Terminal MOS Structurep. 591
Drain Current Formulation Using Quasi-Fermi Potentialsp. 594
Results of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Regionp. 598
Evaluation of the Intrinsic Transient Source and Drain Currentsp. 600
Charges for the Accurate Strong-Inversion Modelp. 603
Quantities Used in the Derivation of the Non-Quasi-Static y-Parameter Modelp. 606
Indexp. 609
Table of Contents provided by Blackwell. All Rights Reserved.
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