free shipping on orders over $35*
BUYBACK CART Buyback Cart Total Buyback Cart Total
free shipping on buybacks!

    Characterization and Metrology for ULSI Technology 2000 International Conference

    ISBN-10: 156396967X
    ISBN-13: 9781563969676
    Author(s): David G. Seiler, Alain C. Diebold, Thomas J. Shaffner, Robert McDonald, W. Murray Bullis
    Description: The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm. Some of the challenges are materials-related, such as transistors with high-k  More...
    Buy it from: $4.31
    This item will ship on Thursday, July 30.

    30 day, 100% Satisfaction Guarantee
    Study Briefs
    The first one is FREE! All the information you need in one place—a subject summary in digital form. For a limited time, add a Study Brief to your cart with a book purchase or rental and the discount will be applied at checkout.
    Study Briefs
    Calculus 1
    Digital only List price: $4.95
    Sale price: $1.99
    Study Briefs
    Physics Equations and Answers
    Digital only List price: $4.95
    Sale price: $1.99
    Study Briefs
    Digital only List price: $4.95
    Sale price: $1.99
    Study Briefs
    Periodic Table
    Digital only List price: $4.95
    Sale price: $1.99
    Customers Also Bought

    List Price: $185.00
    Publisher: American Institute of Physics
    Binding: Mixed Media
    Pages: 708
    Weight: 4.268
    Language: English

    The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm. Some of the challenges are materials-related, such as transistors with high-k dielectrics and on-chip interconnects made from copper and low-k dielectrics. The magnitude of these challenges demands special attention from those in the metrology and analytical measurements community. Characterization and metrology are key enablers for developing semiconductor process technology and in improving manufacturing.This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of the process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics.It provides a concise and effective portrayal of industry characterization needs and some of the problems that must be addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. It also provides a basis for stimulating practical perspectives and new ideas for research and development.

    Program Committee Members
    Transistor Physics History
    John Bardeen and Transistor Physics
    Technology in the Internet Era
    Metrology Needs and Challenges for the Semiconductor Industry
    Impact of the ITRS Metrology Roadmap
    Semiconductor Product Analysis Challenges Based on the 1999 ITRS
    The Assembly Analytical Forum: Addressing the Analytical Challenges Facing Packaging and Assembly
    Front end Processes--Materials
    Silicon Wafers for the Mesoscopic Era
    Front end Processes--Gate Dielectrics
    Photoemission Study of Energy Band Alignment and Gap State Density Distribution for High-k Gate Dielectrics
    Challenges of Gate-Dielectric Scaling, including the Vertical Replacement-Gate MOSFET
    Electrical Characterization of Ultra-thin Oxides and High K Gate Dielectrics
    Modeling Soft Breakdown Phenomenon under Constant Voltage Stress in Ultra Thin Gate Oxides with PSpice Circuit Simulator
    Product Wafer Measurements of MOS Gate Dielectric Quality with a Small Diameter Elastic Probe
    HRTEM Image Simulations of Structural Defects in Gate Oxides
    HRTEM Image Simulations for Gate Oxide Metrology
    Optical and Electrical Thickness Measurements of Alternate Gate Dielectrics: A Fundamental Difference
    An Examination of Tantalum Pentoxide Thin Dielectric Films Using Grazing Incidence X-ray Reflectivity and Powder Diffraction
    Gate Dielectric Thickness Metrology Using Transmission Electron Microscopy
    Spectroscopic Evidence for a Network Structure in Plasma-Deposited Ta[subscript 2]O[subscript 5] Films for Microelectronic Applications
    Minimization of Mechanical and Chemical Strain at Dielectric-Semiconductor and Internal Dielectric Interfaces in Stacked Gate Dielectrics for Advanced CMOS Devices
    Characterization of Silicon-Oxynitride Dielectric Thin Films Using Grazing Incidence X-ray Photoelectron Spectroscopy
    Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films
    Non-contact Thickness and Electrical Characterization of High-k Dielectrics
    Front End Processes
    Junction Depth Measurement Using Carrier Illumination
    Novel Techniques for Data Retention and Leff Measurements in Two Bit microFLASH Memory Cells
    Characterizing Interfacial Roughness by Light Scattering Ellipsometry
    Directional Mass Analysis of Ozone Dissociation during Thin Oxide Formation with Highly Concentrated Ozone
    TEM Analysis of 64M Flash Memory Using FIB Sample Preparation Techniques
    Power Spectral Density Functions for Si Wafer Surfaces Using Six Measurement Techniques
    Non-contact Defect Diagnostics in Cz-Si Wafers Using Resonance Ultrasonic Vibrations
    Front End Processes--Electrical Characterization
    Quantitative Analysis of Copper Contamination in Silicon by Surface Photovoltage Minority Carrier Lifetime Analysis
    COCOS (Corona Oxide Characterization of Semiconductor) Non-contact Metrology for Gate Dielectrics
    "Gated-Diode" Configuration in SOI MOSFET's: A Sensitive Tool for Evaluating the Quality and Reliability of the Buried Si/SiO[subscript 2] Interface
    Front End Processes--In-Situ
    Investigation and Control of Spatial Characteristics of Chamber-Cleaning Plasmas
    Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges
    Development of an In-Line X-ray Reflectivity Technique for Metal Film Thickness Measurement
    In-Situ Sensing Using Mass Spectrometry and Its Use for Run-to-Run Control on a W-CVD Cluster Tool
    ITS-90 Calibration of Radiation Thermometers for RTP Using Wire/Thin-Film Thermocouples on a Wafer
    Non-destructive Characterization of CMP Pads Using Scanning Ultrasonic Transmission
    Monitoring Ion Current and Ion Energy during Plasma Processing Using Radio-Frequency Current and Voltage Measurements
    Fiber Optic Based Optical Tomography Sensor for Monitoring Plasma Uniformity
    Contamination and Defect Analysis
    Chemical Contamination Control in ULSI Wafer Processing
    Full Wafer Particle Defect Characterization
    A Numerical/Experimental Investigation of Microcontamination in a Rotating Disk Chemical Vapor Deposition Reactor
    Detection of Organic Contamination on Silicon Substrates: Comparison of Several Techniques
    On Problems in Obtaining Root Cause Analysis of Al-Based Particles
    PEEM Imaging and Modeling of Dopant-Concentration Variation in Si Devices
    Defect Identification by Compositional Defect Review Using Auger Electron Spectroscopy
    Defect Mapping Accuracy of KLA-Tencor Surfscan 6200, 6400, and SP1
    Comparison of Size Distribution of Polystyrene Spheres Produced by Pneumatic and Electrospray Nebulization
    Characterization and Analysis of Microelectronic Processes Using Raman Spectroscopy
    Application of Micro-Raman and Photoluminescence Spectroscopy to Defect and Thin Film Characterization
    The Status and Future of Imaging Metrology Needs for Lithography
    Critical Issues in Overlay Metrology
    Small-Angle Neutron Scattering Measurements for the Characterization of Lithographically Prepared Structures
    New Developments in Deep Ultraviolet Laser Metrology for Photolithography
    Secondary Electron Image Profiles Using Bias Voltage Technique in Deep Contact Hole
    A Hybrid Analysis of Ellipsometry Data from Patterned Structures
    Characterization of CCD Cameras and Optics for Dimensional Metrology
    Interconnect and Back End Processing
    Guidelines for Selecting Multi-technology Recipes in Multilayer Filmstack Measurements
    Measurement of the Dielectric Constant of Thin Films Using Goniometric Time-Domain Spectroscopy
    New Photo-Acoustic Techniques for Improved In-Line Control of Opaque Metal Film Processing
    Cu Electrodeposition for On-Chip Interconnections
    Characterization of BPSG Films Using Neutron Depth Profiling and Neutron/X-ray Reflectometry
    Energy Dispersive X-ray Analysis Using a Microcalorimeter Detector
    Polysilicon Chemical-Mechanical Polishing Process Characterization Using a Non-contact Capacitance Probe Technique
    Interconnect and Back End Processing--Low-K
    The Transition to Cu, Damascene and Low-K Dielectrics for Integrated Circuit Interconnects, Impacts on the Industry
    Mechanical Characterization of Low-K Dielectric Materials
    Investigation of N[subscript 2] Plasma Effects on the Depth Profile of Hydrogen Silsesquioxane Thin Films Using High Resolution Specular X-ray Reflectivity
    High Sensitivity Technique for Measurement of Thin Film Out-of-Plane Expansion. II. Conducting and Semiconducting Samples
    Nanoscale Elastic Imaging and Mechanical Modulus Measurements of Aluminum/Low-k Dielectric Interconnect Structures
    Structure and Property Characterization of Low-k Dielectric Porous Thin Films Determined by X-ray Reflectivity and Small-Angle Neutron Scattering
    Thin Film
    Semiconductor Material Applications of Rapid X-ray Reflectometry (XRR)
    Recent Progress in Picosecond Ultrasonic Process Metrology
    Non-contact Metal Film Metrology Using Impulsive Stimulated Thermal Scattering
    Critical Analytical Techniques
    New Challenges for Analytical TEM in Device Characterization
    Gate Dielectric Metrology Using Advanced TEM Measurements
    Low Voltage Microanalysis Using Microcalorimeter EDS
    Spectroscopic Ellipsometry from the Vacuum Ultraviolet to the Far Infrared
    Critical Analytical Techniques--Optical Characterization
    Optical Metrology for DMD Characterization
    Backside Picosecond Timing Measurements on CMOS Integrated Circuits
    Optical Constants for Metrology of Hydrogenated Amorphous Silicon-Nitrogen Alloys on Si
    Feasibility and Applicability of Integrated Metrology Using Spectroscopic Ellipsometry in a Cluster Tool
    A New Purged UV Spectroscopic Ellipsometer to Characterize Thin Films and Multilayers at 157 nm
    A New Lithography of Functional Plasma Polymerized Thin Films
    Advanced FTIR Technology for the Chemical Characterization of Product Wafers
    Critical Analytical Techniques--Physical Characterization/X-rays
    Scanning Electron Microscopy: Present Capability, Future Improvements and Potential Replacements
    Ultra High Resolution X-ray Detectors
    X-ray Metrology by Diffraction and Reflectivity
    Automated SEM and TEM Sample Preparation Applied to Copper/Low-k Materials
    Characterization of Si/SiO[subscript 2] Multilaver Thin Films by Grazing Incidence X-ray Reflectivity
    Measurement of Silicon Dioxide Film Thicknesses by X-ray Photoelectron Spectroscopy
    Comparison of High- and Low-Voltage X-ray Mapping of an Electronic Device
    Current Projects of ISO Technical Committee 201 on Surface Chemical Analysis
    Characterization of Ultra-thin Dielectric Films Buried under Poly-Si Electrodes Using X-ray Reflectivity
    Critical Analytical Techniques--Atom Probes/Scanning Probes
    Towards Routine, Quantitative Two-Dimensional Carrier Profiling with Scanning Spreading Resistance Microscopy
    Local Electrode Atom Probes: Prospects for 3D Atomic-Scale Metrology Applications in the Semiconductor and Data Storage Industries
    Evaluation of MFM for Probing Electromigration Processes
    FASTC2D: Software for Extracting 2D Carrier Profiles from Scanning Capacitance Microscopy Images
    High Resolution Dopant Profiling Using a Tunable AC Scanning Tunneling Microscope
    SCaMsim, A New Three-Dimensional Simulation Tool for Scanning Capacitance Microscopy
    Experimental Investigation and 3D Simulation of Contrast Reversal Effects in Scanning Capacitance Microscopy
    Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy
    Critical Analytical Techniques--Sims/Shallow Junction Analysis
    Ultra-shallow Junction Metrology Using SIMS: Obstacles and Advances
    High Depth Resolution Secondary Ion Mass Spectrometry (SIMS) Analysis of Si[subscript 1-x]Ge[subscript x]:C HBT Structures
    Neutron Activation Analysis for Calibration of Phosphorus Implantation Dose
    High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry
    Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization
    TOF-SIMS Quantification of Low Energy Arsenic Implants through Thin SiO[subscript 2] Layers
    Author Index
    Key Words Index

    Buy it from $4.31
    PLUS weekly prizes!
    Get a extra entry for each item purchased or sold.
    what's this?
    Rush Rewards U
    Members Receive:
    You have reached 400 XP and carrot coins. That is the daily max!
    Free shipping on orders over $35*

    *A minimum purchase of $35 is required. Shipping is provided via FedEx SmartPost® and FedEx Express Saver®. Average delivery time is 1 – 5 business days, but is not guaranteed in that timeframe. Also allow 1 - 2 days for processing. Free shipping is eligible only in the continental United States and excludes Hawaii, Alaska and Puerto Rico. FedEx service marks used by permission."Marketplace" orders are not eligible for free or discounted shipping.

    Learn more about the TextbookRush Marketplace.